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Open AccessJournal ArticleDOI

A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

A. H. Mahan, +4 more
- 15 Jan 2008 - 
- Vol. 516, Iss: 5, pp 529-532
TLDR
In this article, the authors compare the crystallization kinetics of HWCVD and PECVD a-Si:H films, containing different initial film hydrogen contents (CH), by annealing at 600 °C.
About: 
This article is published in Thin Solid Films.The article was published on 2008-01-15 and is currently open access. It has received 25 citations till now. The article focuses on the topics: Crystallization & Nucleation.

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Journal ArticleDOI

Crystallization of amorphous silicon films by rapid thermal annealing for heterojunction photovoltaic solar cells1

Baldus-JeursenC., +3 more
- 17 Mar 2014 - 
TL;DR: In this article, the extent of crystallization was examined by Raman and ultraviolet reflectance spectroscopy, and ellipsometry was used to derive film optical properties, and solar cells were fabricated and analyzed using dark and illuminated current-voltage characteristics, external quantum efficiency and solar simulator measurements with device efficiency approaching 14%.
Journal ArticleDOI

The effect of original crystalline phase on solid phase crystallization of hydrogenated silicon thin films

Tianning Wang, +4 more
- 01 Nov 2013 - 
TL;DR: In this paper, a-Si:H and micro-crystalline silicon (μc-Si-H) films fabricated on glass substrate are crystallized through solid phase crystallization process.
Journal ArticleDOI

Electric-Field Enhanced Ni Induced Lateral Crystallization Rate Saturation in Heavily Phosphorus-Doped Amorphous Silicon

Ji-Su Ahn, +2 more
- 06 Jan 2016 - 
TL;DR: In this article, an electric field enhanced Ni induced lateral crystallization rate saturation in n-doped amorphous silicon thin films was investigated as a function of PH3 doping time.
Dissertation

Enhanced crystallization of amorphous silicon thin films by nano-crystallite seeding

Jason Trask
TL;DR: In this article, Kortshagen et al. presented a Ph.D. dissertation on Mechanical Engineering at the University of Minnesota with a focus on the application of machine learning.
Proceedings ArticleDOI

Relative crystallite sizes for thermally annealed HWCVD A-Si:H films with and without a sub-threshold laser fluence

M. S. Dabney, +7 more
TL;DR: In this paper, the relative EBSD grain sizes for HWCVD a-Si:H films which have been sub-threshold laser illuminated prior to thermal annealing compared to films that have undergone no prior laser processing are reported.
References
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Journal ArticleDOI

Deposition of device quality, low H content amorphous silicon

A.H. Mahan, +4 more
- 01 May 1991 - 
TL;DR: In this paper, it was shown that hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament.
Journal ArticleDOI

Structural information from the Raman spectrum of amorphous silicon.

David Beeman, +2 more
- 15 Jul 1985 - 
TL;DR: It is shown that the width of the ``optic peak'' increases roughly linearly with the rms bond-angle distortion of the network, consistent with model-building experience which shows that it is impossible to construct fully bonded amorphous networks with \ensuremath{\Delta}${\ensureMath{\theta}}_{b}$.
Journal ArticleDOI

Crystal grain nucleation in amorphous silicon

Corrado Spinella, +2 more
- 04 Nov 1998 - 
TL;DR: In this paper, the morphological evolution of the amorphous towards the polycrystalline phase is investigated by transmission electron microscopy and it is interpreted in terms of a physical model containing few free parameters related to the thermodynamical properties of ammorphous silicon and to the kinetical mechanisms of crystal grain growth.
Journal ArticleDOI

Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

R. B. Iverson, +1 more
- 01 Sep 1987 - 
TL;DR: In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.
Journal ArticleDOI

Multiple-quantum NMR study of clustering in hydrogenated amorphous silicon.

Jean Baum, +4 more
- 31 Mar 1986 - 
TL;DR: Using the fact that multiple-quantum excitation is limited by the size of the dipolar-coupled spin system, it is shown that the predominant bonding environment for hydrogen is a cluster of four to seven atoms.
Related Papers (5)

Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

R. B. Iverson, +1 more
- 01 Sep 1987 - 

Identification of Nucleation Center Sites in Thermally Annealed Hydrogenated Amorphous Silicon

A. Harv Mahan, +7 more
- 24 Jul 2009 - 

Crystal grain nucleation in amorphous silicon

Corrado Spinella, +2 more
- 04 Nov 1998 - 

Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films

Kenji Nakazawa, +1 more
- 01 Aug 1990 - 

Monitoring of crystallization and the effect of the deposition rate, hydrogen content and annealing process on the crystallization of hot wire chemical vapor deposited hydrogenated amorphous silicon (a-Si:H) films

B. Roy, +5 more
- 31 Jul 2008 - 
Frequently Asked Questions (1)
Q1. What contributions have the authors mentioned in the paper "A comparison of grain nucleation and grain growth during crystallization of hwcvd and pecvd a-si:h films" ?

Even though the bonded hydrogen evolves very early from the film during annealing, the authors suggest that the initial spatial distribution of hydrogen plays a critical role in the crystallization kinetics, and they propose a preliminary model to describe this process.