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Journal ArticleDOI

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

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TLDR
The standard power module structure is reviewed, the reasons why novel packaging technologies should be developed are described, and the packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail.
Abstract
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.

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Citations
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Journal ArticleDOI

Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging

TL;DR: In this article , a comprehensive review of the top-side interconnection technologies of wide bandgap (WBG) semiconductor power devices and modules is presented, followed by a discussion of their advantages, challenges, and failure modes.

Single-Phase Dielectric Fluid Thermal Management for Power-Dense Automotive Power Electronics

TL;DR: In this article , the authors describe the design and performance of a dielectric fluid cooling concept for automotive power electronics, which combines a low-thermal-resistance package with a high-performance convective cooling strategy (slot jets impinging on finned surfaces).
Journal ArticleDOI

Flat plate two-phase heat spreader on the thermal management of high-power electronics: a review

TL;DR: In this paper, a review of flat plate two-phase heat spreaders (FTHSs) is presented, which summarizes the major parameters of FTHS that affect heat transfer performance.
Journal ArticleDOI

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

TL;DR: In this paper , the authors present the limitations produced at the power module level by packaging materials, which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials.
References
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Journal ArticleDOI

High-temperature electronics - a role for wide bandgap semiconductors?

TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI

Review of Silicon Carbide Power Devices and Their Applications

TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Journal ArticleDOI

The resonant DC link converter-a new concept in static power conversion

TL;DR: In this paper, a resonant DC-link inverter was proposed and realized with the addition of only one small inductor and capacitor to a conventional voltage source inverter circuit.
Journal ArticleDOI

An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations

TL;DR: In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and allSiC device combinations.
Journal ArticleDOI

Resonant snubbers with auxiliary switches

W. McMurray
TL;DR: In this paper, a lossless resonant snubberber is proposed to avoid trapping energy in a converter circuit where high dynamic stresses at both turn-on and turn-off are normally encountered.
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