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Journal ArticleDOI

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

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TLDR
The standard power module structure is reviewed, the reasons why novel packaging technologies should be developed are described, and the packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail.
Abstract
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.

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Citations
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Journal ArticleDOI

Melt Processable Novolac Cyanate Ester/Biphenyl Epoxy Copolymer Series with Ultrahigh Glass-Transition Temperature.

TL;DR: In this article, a series of copolymers made by melt blending novolac cyanate ester and tetramethylbiphenyl epoxy (NCE/EP) are reported.
Journal ArticleDOI

Electret: An Entirely New Approach of Solving Partial Discharge Caused by Triple Points, Sharp Edges, Bubbles, and Airgaps

TL;DR: It is theoretically shown that the incorporation of electret layers substantially reduces the undesired high electric fields that promote PD activities, and the results suggest that high electric field around sharp edges, triple points, airgaps, and bubbles can be reduced substantially either by controlling the distance between an electret layer and a high-field surface or by tailoring the surface charge density of the electrets.
Journal ArticleDOI

Electrets: A Remedy for Partial Discharge Caused by Power Electronics Switching

TL;DR: A novel approach that mitigates partial discharge (PD) by neutralizing local electric fields with the incorporation of electrets with great promise is presented and suggests that further development of the technology may be able to completely solve PD that has been both chronic and emerging issues in the power industry.
Journal ArticleDOI

Finite Element and Experimental Analysis of Spacer Designs for Reducing the Thermomechanical Stress in Double-Sided Cooling Power Modules

TL;DR: In this paper, the role of metal spacer design in reducing the thermomechanical stress of solder joint in automotive double-sided cooling power electronics modules is addressed, and three new spacer shapes are explored.
Journal ArticleDOI

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

TL;DR: This study presents a review ofWBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices, and considers suitable cooling techniques for WBG inverters at different power levels.
References
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Journal ArticleDOI

High-temperature electronics - a role for wide bandgap semiconductors?

TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI

Review of Silicon Carbide Power Devices and Their Applications

TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Journal ArticleDOI

The resonant DC link converter-a new concept in static power conversion

TL;DR: In this paper, a resonant DC-link inverter was proposed and realized with the addition of only one small inductor and capacitor to a conventional voltage source inverter circuit.
Journal ArticleDOI

An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations

TL;DR: In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and allSiC device combinations.
Journal ArticleDOI

Resonant snubbers with auxiliary switches

W. McMurray
TL;DR: In this paper, a lossless resonant snubberber is proposed to avoid trapping energy in a converter circuit where high dynamic stresses at both turn-on and turn-off are normally encountered.
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