Journal ArticleDOI
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
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TLDR
The standard power module structure is reviewed, the reasons why novel packaging technologies should be developed are described, and the packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail.Abstract:
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.read more
Citations
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Reliability of Power Electronic Systems for EV/HEV Applications
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Plastic-strain of aluminium interconnections during pulsed operation of IGBT multichip modules
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A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization
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Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission
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Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement
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TL;DR: In this article, the authors proposed a double-sided cooling based on planar packaging method, which can get rid of the thermal and electrical challenges in multichip SiC power modules.
References
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Journal ArticleDOI
Comparison Study of Common-Mode Noise and Thermal Performance for Lateral Wire-Bonded and Vertically Integrated High Power Diode Modules
TL;DR: In this article, the authors investigated the power module design for better common-mode (CM) noise and thermal performance and selected a high-frequency full-bridge diode rectifier as a case study.
Proceedings ArticleDOI
Silicon carbide power chip on chip module based on embedded die technology with paralleled dies
Guillaume Regnat,Pierre-Olivier Jeannin,Guillaume Lefèvre,Jeffrey Ewanchuk,David Frey,Stefan Mollov,Jean-Paul Ferrieux +6 more
TL;DR: A parallelization technique enabling impedance balancing is developed for the layout and validated using four parallel Silicon Carbide (SiC) MOSFETs and the thermal management of the module is studied and die attach with direct copper filled vias is validated.
Journal ArticleDOI
Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages
TL;DR: In this article, a prototype 4H-SiC JFET IC was demonstrated without any change/adjustment of input signal levels or power supply voltages, which is expected to simplify infusion of this IC technology into a broader range of beneficial applications.
Proceedings ArticleDOI
Current source inverter based cascaded solid state transformer for AC to DC power conversion
TL;DR: A cascaded current source converter based topology with high frequency isolation as a replacement of the huge line frequency transformer is proposed and experimental results are presented as a validation of the functionality of the converter.
Journal ArticleDOI
Characterization of Nanosilver Dry Films for High-Temperature Applications
TL;DR: In this paper, the effects of applied pressure and holding time at the desired sintering temperature on the die shear strength were investigated by mechanical, thermal, acoustic, and microscopic analysis.