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Journal ArticleDOI

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

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TLDR
The standard power module structure is reviewed, the reasons why novel packaging technologies should be developed are described, and the packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail.
Abstract
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.

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Citations
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Journal ArticleDOI

Reliability of Power Electronic Systems for EV/HEV Applications

TL;DR: This article introduces the reliability requirements and challenges given for the power electronics applied in EV/HEV applications, and the advances in power electronic components to address the reliability challenges are introduced as they individually contribute to the overall system reliability.

Plastic-strain of aluminium interconnections during pulsed operation of IGBT multichip modules

TL;DR: In this paper, the authors present an exaustive description of the symptoms and a simple qualitative model for the time-dependent lift-off of aluminium bond wires in IGBT modules.
Journal ArticleDOI

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

TL;DR: In this paper, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermomechanical stresses in the power module and a double-side cooled half-bridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized.
Journal ArticleDOI

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

TL;DR: In this article, a detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given, and Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors are proposed, and several promising design approaches are discussed.
Journal ArticleDOI

Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement

TL;DR: In this article, the authors proposed a double-sided cooling based on planar packaging method, which can get rid of the thermal and electrical challenges in multichip SiC power modules.
References
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Journal ArticleDOI

Comparison Study of Common-Mode Noise and Thermal Performance for Lateral Wire-Bonded and Vertically Integrated High Power Diode Modules

TL;DR: In this article, the authors investigated the power module design for better common-mode (CM) noise and thermal performance and selected a high-frequency full-bridge diode rectifier as a case study.
Proceedings ArticleDOI

Silicon carbide power chip on chip module based on embedded die technology with paralleled dies

TL;DR: A parallelization technique enabling impedance balancing is developed for the layout and validated using four parallel Silicon Carbide (SiC) MOSFETs and the thermal management of the module is studied and die attach with direct copper filled vias is validated.
Journal ArticleDOI

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

TL;DR: In this article, a prototype 4H-SiC JFET IC was demonstrated without any change/adjustment of input signal levels or power supply voltages, which is expected to simplify infusion of this IC technology into a broader range of beneficial applications.
Proceedings ArticleDOI

Current source inverter based cascaded solid state transformer for AC to DC power conversion

TL;DR: A cascaded current source converter based topology with high frequency isolation as a replacement of the huge line frequency transformer is proposed and experimental results are presented as a validation of the functionality of the converter.
Journal ArticleDOI

Characterization of Nanosilver Dry Films for High-Temperature Applications

TL;DR: In this paper, the effects of applied pressure and holding time at the desired sintering temperature on the die shear strength were investigated by mechanical, thermal, acoustic, and microscopic analysis.
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