Journal ArticleDOI
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
Reads0
Chats0
TLDR
The standard power module structure is reviewed, the reasons why novel packaging technologies should be developed are described, and the packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail.Abstract:
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.read more
Citations
More filters
Journal ArticleDOI
Reliability of Power Electronic Systems for EV/HEV Applications
TL;DR: This article introduces the reliability requirements and challenges given for the power electronics applied in EV/HEV applications, and the advances in power electronic components to address the reliability challenges are introduced as they individually contribute to the overall system reliability.
Plastic-strain of aluminium interconnections during pulsed operation of IGBT multichip modules
Mauro Ciappa,P. Malberti +1 more
TL;DR: In this paper, the authors present an exaustive description of the symptoms and a simple qualitative model for the time-dependent lift-off of aluminium bond wires in IGBT modules.
Journal ArticleDOI
A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization
TL;DR: In this paper, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermomechanical stresses in the power module and a double-side cooled half-bridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized.
Journal ArticleDOI
Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission
TL;DR: In this article, a detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given, and Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors are proposed, and several promising design approaches are discussed.
Journal ArticleDOI
Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement
Fengtao Yang,Jia Lixin,Laili Wang,Fan Zhang,Binyu Wang,Cheng Zhao,Jianpeng Wang,Christoph Friedrich Bayer,Jan Abraham Ferreira +8 more
TL;DR: In this article, the authors proposed a double-sided cooling based on planar packaging method, which can get rid of the thermal and electrical challenges in multichip SiC power modules.
References
More filters
Proceedings ArticleDOI
Planar-bond-all: A technology for three-dimensional integration of multiple packaging functions into advanced power modules
TL;DR: In this article, a 3D planar electrical interconnection and double-sided direct cooling are integrated into one packaging process for power electronics modules for electric drive systems of modern vehicles.
Proceedings ArticleDOI
POL-kw Modules for High Power Applications
Liang Yin,Kaustubh Ravindra Nagarkar,Christopher James Kapusta,Risto Ilkka Tuominen,Arun Virupaksha Gowda,Shingo Hayashibe,Hitoshi Ito,Tadashi Arai +7 more
TL;DR: In this article, a new high power density module using the Power Overlay (POL) packaging platform is presented, which has shown significantly reduced electrical parasitics, while providing a thin profile to allow double-side cooling and the integration of gate drive circuits.
Journal ArticleDOI
Development of a 15 kV bridge rectifier module using 4H-SiC junction-barrier schottky diodes
TL;DR: In this article, a 15 kV, 3 A silicon carbide junction-barrier Schottky diodes manufactured by CREE Inc. were used to demonstrate higher efficiency and more compact high-voltage power conversion systems.
Proceedings ArticleDOI
New compact, high performance 7 th Generation IGBT module with direct liquid cooling for EV/HEV inverters
Khalid Hassan Hussein,Mikio Ishihara,Noboru Miyamoto,Nakata Yosuke,Toshiyo Nakano,John F. Donlon,Eric R. Motto +6 more
TL;DR: In this paper, the authors presented a new compact, direct liquid-cooled IGBT power module series (J1-Series) addressing major requirements for electric and hybrid electric (EV/HEV) power-train inverter applications in terms of high power-density, light-weight, and high-reliability.
Proceedings ArticleDOI
Low-temperature, organics-free sintering of nanoporous copper for reliable, high-temperature and high-power die-attach interconnections
Kashyap Mohan,Ninad Shahane,Pulugurtha Markondeya Raj,Antonia Antoniou,Vanessa Smet,Rao Tummala +5 more
TL;DR: In this article, a die-attach joining technique based on low-temperature film sintering of nanoporous Cu is demonstrated, and a low-cost replacement of nano-sintering pastes with the following benefits is proposed: (i) synthesis by electrochemical dealloying, compatible with standard lithography processes; (ii) no organic content to minimize risks of voiding and corrosion; and (iii) controllable physical properties post sintered through tailorable initial nanostructure and morphology