Journal ArticleDOI
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues
Reads0
Chats0
TLDR
The standard power module structure is reviewed, the reasons why novel packaging technologies should be developed are described, and the packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail.Abstract:
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.read more
Citations
More filters
Journal ArticleDOI
Effect of Deposition Flux on Polytypic Competitive Growth of SiC Crystal by Kinetic Monte Carlo Method
TL;DR: In this article , a competitive kinetic Monte Carlo (KMC) model for gas phase epitaxy growth of 4H-SiC and 6H−SiC crystals is established based on polytype transformation and the Monte Carlo algorithm.
Proceedings ArticleDOI
Current Uniformity Optimization of Multi-Chip SiC Module for High-Power Applications
TL;DR: In this paper , the effect of die orientation on the current uniformity of paralleled SiC MOSFETs was analyzed and an optimization method of symmetry and mirroring was proposed.
High Performance SiC Power Module Based on Repackaging of Discrete SiC Devices
Zibo Chen,Alex Q. Huang +1 more
TL;DR: In this paper , a cost-effective packaging methodology for high-power SiC intelligent power modules (IPMs) with discrete SiC devices is proposed, achieving very low loop inductance and thermal resistance, and more than 50% cost reduction.
Journal ArticleDOI
Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters
TL;DR: In this article , the feasibility of the printed copper (Cu) paste interconnects for applications in power semiconductor modules and switching converters is demonstrated. But the electrical domain properties of these novel interconnect have not yet been investigated in detail.
Journal ArticleDOI
A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development
TL;DR: In this paper , the benefits of SiC MOSFETs in different electrified vehicle (EV) application scenarios, including traction inverters, on-board converters, and off-board charging applications, are discussed.
References
More filters
Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Journal ArticleDOI
Review of Silicon Carbide Power Devices and Their Applications
TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Journal ArticleDOI
The resonant DC link converter-a new concept in static power conversion
TL;DR: In this paper, a resonant DC-link inverter was proposed and realized with the addition of only one small inductor and capacitor to a conventional voltage source inverter circuit.
Journal ArticleDOI
An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations
TL;DR: In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and allSiC device combinations.
Journal ArticleDOI
Resonant snubbers with auxiliary switches
TL;DR: In this paper, a lossless resonant snubberber is proposed to avoid trapping energy in a converter circuit where high dynamic stresses at both turn-on and turn-off are normally encountered.