Journal ArticleDOI
A Single‐Device Universal Logic Gate Based on a Magnetically Enhanced Memristor
Mirko Prezioso,Alberto Riminucci,Patrizio Graziosi,Ilaria Bergenti,R. K. Rakshit,Raimondo Cecchini,Anna Vianelli,Francesco Borgatti,Norman Haag,Maureen Willis,Alan J. Drew,William P. Gillin,Valentin Dediu +12 more
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TLDR
Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM), which realizes a universal implication (IMP) logic gate based on a single MEM device.Abstract:
Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.read more
Citations
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Spin-torque building blocks
TL;DR: By assembling magnetic nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged, focus in particular on recent concepts such as magnonics and spintronic neural networks.
Journal ArticleDOI
Activating the molecular spinterface.
TL;DR: In this Perspective, inorganic/molecular interfaces are explored by looking closely at both sides of the interface and the interface is described as an ideal platform for creating new spin effects.
Journal ArticleDOI
The first decade of organic spintronics research
TL;DR: A set of significant milestones achieved in organic spintronic devices such as organic spin valves, bipolar spin-valves, and hybrid organic/inorganic light emitting diodes in comparison with representative inorganic spintronics devices are reviewed.
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Nanoionics-Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications
TL;DR: A critical overview of the proposed nano-ionic mechanisms for memristive switching is given in this paper, focusing particularly on providing fundamental insights into the strategies for regulating the adaptive memrisive characteristics of devices that resemble the behaviors of biological synapses, which is an element of neural networks.
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Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications.
TL;DR: This work investigated the suitability of tantalum oxide (TaOx) transistor-memristor (1T1R) arrays for such applications, particularly the ability to accurately, repeatedly, and rapidly reach arbitrary conductance states and the trade-offs between programming speed and programming error.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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Magnetic Domain-Wall Racetrack Memory
TL;DR: The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
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‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TL;DR: Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.
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Giant magnetoresistance in organic spin-valves
TL;DR: The injection, transport and detection of spin-polarized carriers using an organic semiconductor as the spacer layer in a spin-valve structure is reported, yielding low-temperature giant magnetoresistance effects as large as 40 per cent.