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Journal ArticleDOI

AC performance of nanoelectronics: towards a ballistic THz nanotube transistor

Peter Burke
- 01 Oct 2004 - 
- Vol. 48, Iss: 10, pp 1981-1986
TLDR
In this paper, the cutoff frequency of carbon nanotube transistors is analyzed and the influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotubes is analyzed.
Abstract
We present phenomenological predictions for the cutoff frequency of carbon nanotube transistors. We also present predictions of the effects parasitic capacitances on AC nanotube transistor performance. The influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotube transistors is analyzed. We discuss the challenges of impedance matching for ac nano-electronics in general, and show how integrated nanosystems can solve this challenge. Our calculations show that carbon nano-electronics may be faster than conventional Si, SiGe, GaAs, or InP semiconductor technologies. We predict a cutoff frequency of 80 GHz/L, where L is the gate length in microns, opening up the possibility of a ballistic THz nanotube transistor.

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Journal ArticleDOI

Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

TL;DR: In this paper, the authors present a review of recent advances in assembly techniques for forming ultrathin carbon nanotubes, modeling and experimental work that reveals their collective properties, and engineering aspects of implementation in sensors and in electronic devices and circuits with various levels of complexity.
Journal ArticleDOI

Attosecond metrology: from electron capture to future signal processing

TL;DR: In this paper, the basic concepts underlying attosecond measurement and control techniques are reviewed, focusing on the fundamental speed limit of electronic signal processing that employs ultimate-speed electron metrology.
Journal ArticleDOI

Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications

TL;DR: While the primary focus of this review is on the science framework of SWCNT growth, connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene are drawn.
Journal ArticleDOI

Nanotube electronics for radiofrequency applications

TL;DR: Progress towards nanotube electronics for radiofrequency applications is reviewed in terms of device physics, circuit design and the manufacturing challenges.
Journal ArticleDOI

Nanotube electronics and optoelectronics

Phaedon Avouris, +1 more
- 01 Oct 2006 - 
TL;DR: In this article, the electrical and optical properties of carbon nanotubes (CNTs) are discussed and the possible use of CNTs in optoelectronic devices such as electroluminescent light emitters and photodetectors.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

Room-temperature transistor based on a single carbon nanotube

TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
Journal ArticleDOI

Ballistic carbon nanotube field-effect transistors

TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
Book

Fields and Waves in Communication Electronics

TL;DR: In this article, two-and three-dimensional boundary value problems are studied for two-dimensional waveguides with Cylindrical Conducting Boundaries (CCLB).
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