β-Ga2O3 material properties, growth technologies, and devices: a review
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In this article , the state-of-the-art β-Ga 2 O 3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author's group.Abstract:
Abstract Rapid progress in β -gallium oxide ( β -Ga 2 O 3 ) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β -Ga 2 O 3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β -Ga 2 O 3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β -Ga 2 O 3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group. read more
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A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition
TL;DR: In this paper , the authors discuss the recent progress in epitaxial growth of β-Ga2O3 films and highlight challenges in obtaining high growth rate, low defects, and high carrier mobilities.
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Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity
TL;DR: In this paper , the authors used a simple thermal oxidation process to develop a β-Ga2O3/GaN heterointerface-based device that shows ultrahigh performance in self-driven, low bias, and spectrally broad responsive range.
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State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics
An Chen Liu,Chiu-Hsiang Hsieh,Catherine Langpoklakpam,Konthoujam James Singh,Wen-Chung Lee,Yi-Kai Hsiao,Ray-Hua Horng,Hao-Chung Kuo,Chang-Ching Tu +8 more
TL;DR: In this paper , a comprehensive review on the material properties, crystal growth, and deposition methods of β-Ga2O3 was provided, and the state-of-the-art depletion mode, enhancement mode, and nanomembrane field-effect transistors (FETs) were evaluated for high power switching and high frequency amplification applications.
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Ga+-focused ion beam damage in n-type Ga2O3
TL;DR: In this article , focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2-30-kV ions at normal incidence and beam currents that were a function of beam voltage.
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Exploring the efficacy of implementing field plate design with air gap on β-Ga2O3 MOSFET for high power & RF applications
Priyanshi Goyal,Harsupreet Kaur +1 more
TL;DR: In this article , a source field plate design with an air gap has been studied on a lateral β-Ga2O3 MOSFET with the objective of achieving improvement in high power as well as RF performance by employing exhaustive TCAD simulations.
References
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
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Polymorphism of Ga2O3 and the System Ga2O3—H2O
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Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
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TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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Power semiconductor device figure of merit for high-frequency applications
TL;DR: In this paper, the authors derived the Baliga high-frequency figure of merit for power semiconductor devices operating in high frequency circuits and showed that significant performance improvement can be achieved by replacing silicon with gallium arsenide, silicon carbide, or semiconducting diamond.
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Crystal Structure of β‐Ga2O3
TL;DR: The crystal structure of β•Ga2O3 has been determined from single-crystal 3D x-ray diffraction data as mentioned in this paper, and the most probable space group to which the crystal belongs is C2h3-C2/m.