Journal ArticleDOI
β-Ga2O3 nanowires: Synthesis, characterization, and p-channel field-effect transistor
TLDR
In this article, the as-grown Ga2O3 nanowires are doped with zinc to increase its carrier concentration and subsequently fabricated into field-effect transistors, which exhibit p-type semiconducting behavior with a significant enhancement of conductivity.Abstract:
Quasione-dimensional Ga2O3 nanowires are synthesized via catalytic chemical vapor deposition method. Their morphology and crystal structure are characterized by electron microscopy and x-ray diffraction techniques, and their optical property is studied by photoluminescence measurement. To develop their future application in nanoelectronic devices, the as-grown Ga2O3 nanowires are doped with zinc to increase its carrier concentration and subsequently fabricated into field-effect transistors. Electron transport measurements show that the doped nanowires exhibit p-type semiconducting behavior with a significant enhancement of conductivity.read more
Citations
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Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Journal ArticleDOI
Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications
TL;DR: A comprehensive review of the state-of-the-art research activities that focus on the Q1D metal oxide systems and their physical property characterizations is provided in this paper, where a range of remarkable characteristics are organized into sections covering a number of metal oxides, such as ZnO, In2O3, SnO2,G a 2O3 and TiO2, etc., describing their electrical, optical, magnetic, mechanical and chemical sensing properties.
Journal ArticleDOI
Metal oxide semiconductor thin-film transistors for flexible electronics
Luisa Petti,Niko Munzenrieder,Niko Munzenrieder,Christian Vogt,Hendrik Faber,Lars Büthe,Giuseppe Cantarella,Francesca Bottacchi,Thomas D. Anthopoulos,Gerhard Tröster +9 more
TL;DR: Flexible metal oxide semiconductor thin-film transistors (TFTs) are considered the most promising technology for tomorrow's electronics as discussed by the authors and are therefore considered to be a promising technology in the field of flexible electronics.
Journal ArticleDOI
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
References
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Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes
TL;DR: In this article, the authors discuss the development of a general approach to rational synthesis of crystalline nanowires of arbitrary composition, and illustrate solutions to these challenges with measurements of the atomic structure and electronic properties of carbon nanotubes.
Journal ArticleDOI
Single- and multi-wall carbon nanotube field-effect transistors
TL;DR: In this article, the authors fabricated field effect transistors based on individual single and multi-wall carbon nanotubes and analyzed their performance, showing that structural deformations can make them operate as field-effect transistors.
Journal ArticleDOI
ORIGIN OF THE BLUE LUMINESCENCE OF β-Ga2O3
Laurent Binet,Didier Gourier +1 more
TL;DR: In this article, a model for the donor VXO and acceptor (VO, VGa) microstructure is proposed, where donors would be assembled in shallow clusters responsible for delocalized electron behavior with minority acceptors between.
Journal ArticleDOI
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices
TL;DR: In this article, the p-type gallium nitride nanowires were synthesized using metal-catalyzed chemical vapor deposition (CVD) and were found to have single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy.
Journal ArticleDOI
Ga2O3 nanowires prepared by physical evaporation
Hongzhou Zhang,Yunchuan Kong,Yongzhong Wang,X. Du,Z. G. Bai,Jing Jing Wang,Dapeng Yu,Y. Ding,Q.L Hang,S.Q. Feng +9 more
TL;DR: In this article, the growth of the GaONW is not controlled by the well-known vapor liquid solid (VLS) mechanism, instead they are seemingly grown via a vapor-solid (VS) process, in which the structural defects play an important role both during the nucleation and the preferable axial growth of wires.