Journal ArticleDOI
Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence
TLDR
In this paper, the authors examined the kinetics of carrier relaxation in GaAs/AlGaAs quantum wells (QWs), quantum wires (QWRs), and quantum boxes (QBs) with time-resolved cathodoluminescence (CL).Abstract:
We have examined the kinetics of carrier relaxation in GaAs/AlGaAs quantum wells (QWs), quantum wires (QWRs), and quantum boxes (QBs) with time-resolved cathodoluminescence (CL). In the cases of QWRs and QBs, the nanostructures were grown via a size-reducing growth approach on pre-patterned GaAs(001) substrates composed of stripes and mesas, respectively. The growth involved deposition of multiple GaAs/AlGaAs layers in order to establish both structural and optical markers which facilitated the identification of important features in transmission electron microscopy (TEM) and CL experiments. In TEM measurements, the lateral dimensions of the top-most GaAs layers in typical stripe and mesa structures comprising the QWRs and QBs delineate GaAs regions expected to exhibit 2D and 3D quantum confinement effects, respectively. Time-delayed CL spectra of all three structures reveal that the initial capture of carriers in the active regions occurs on a time scale less than the temporal resolution of the CL system...read more
Citations
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Local probe techniques for luminescence studies of low-dimensional semiconductor structures
TL;DR: In this article, the state-of-the-art in local probe techniques for studying the properties of nanostructures, concentrating on methods involving monitoring the properties related to photon emission.
Journal ArticleDOI
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
TL;DR: In this paper, the optical properties of InGaN quantum wells (QWs) grown on pyramidal GaN mesas prepared by lateral epitaxial overgrowth (LEO) in a metalorganic chemical vapor deposition system were examined with transmission electron microscopy (TEM) and various cathodoluminescence (CL) imaging techniques, including CL wavelength imaging and activation energy imaging.
Journal ArticleDOI
Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence
TL;DR: A detailed time-resolved cathodoluminescence (CL) study showed that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination as discussed by the authors.
Journal ArticleDOI
A One-step, Template-free Synthesis, Characterization, Optical and Magnetic Properties of Zn1−xMnxTe Nanosheets
TL;DR: The Zn1−xMnxTe nanosheets were synthesized by the one-pot RAPET (reaction under autogenic pressure at elevated temperature) approach.
Journal ArticleDOI
Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence
TL;DR: In this paper, the optical properties of self-assembled InAs quantum dots (QDs) with polarization sensitive and time-resolved cathodoluminescence (CL) techniques were examined.
References
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Journal ArticleDOI
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
Journal ArticleDOI
Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
TL;DR: In this paper, the authors show that self-organized growth along the vertical (i.e., growth) direction of a GaAs island is induced by interacting strain fields induced by the islands which give rise to a preferred direction for In migration.
Journal ArticleDOI
Ultranarrow Luminescence Lines from Single Quantum Dots.
Marius Grundmann,Jürgen Christen,N. N. Ledentsov,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,U. Richter,Ulrich Gösele,J. Heydenreich,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov +14 more
TL;DR: Thanarrow ultranarrow cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K are reported, directly proving their $\ensuremath{\delta}$-function-like density of electronic states.
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Stimulated emission in semiconductor quantum wire heterostructures.
TL;DR: Amplified spontaneous emission and stimulated emission spectra of the GaAs/AlGaAs quantum wires exhibit fine structure arising from transitions between lateral, one-dimensional electron and hole subbands.
Journal ArticleDOI
Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates
TL;DR: In this paper, a GaAs/AlGaAs superlattice heterostructures with layer thickness ≲100 A were grown by molecular beam epitaxy on nonplanar GaAs substrates.