Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors

TLDR: In this article, the signal and the noise of irradiated n-inp and p-in-n 3D silicon strip detectors are compared, and the influence of different temperatures on signal and noise is investigated and results of annealing measurements are reported.

Abstract: Silicon detectors in 3D technology are a candidate for applications in environments requiring an extreme radiation hardness, as in the innermost layers of the detectors at the proposed High-Luminosity LHC. In 3D detectors, the electrodes are made of columns etched into the silicon perpendicular to the surface. This leads to higher electric fields, a smaller depletion voltage and a reduced trapping probability of the charge carriers compared to standard planar detectors. In this article, the signal and the noise of irradiated n-in-p and p-in-n 3D silicon strip detectors are compared. The devices under test have been irradiated up to a fluence of 2×1016 1 MeV neutron equivalent particles per square centimetre (neq/cm2), which corresponds to the fluence expected for the inner pixel detector layers at the High-Luminosity LHC. A relative charge collection efficiency of approximately 70% was obtained even after the highest irradiation fluence with both detector types. The influence of different temperatures on the signal and the noise is investigated and results of annealing measurements are reported.