Journal ArticleDOI
Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
TLDR
In this article, a continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes with the lasing wavelengths approximately 400 nm was demonstrated.Abstract:
Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm2) for the CW operation [28 mA (3.1 kA/cm2) for pulsed mode], being comparable to that of conventional c-plane violet LDs. Both the LDs with the stripes parallel to a- and c-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The c-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the m-plane light emitting diodes fabricated on the free-standing m-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar m-plane GaN-based materials are coming into general use.read more
Citations
More filters
Journal ArticleDOI
Ultraviolet light-emitting diodes based on group three nitrides
TL;DR: In this paper, a light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system, where alloy compositions with a greater aluminium content are required.
Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TL;DR: In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.
Journal ArticleDOI
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
TL;DR: In this article, the materials and growth issues unique to high-performance nonpolar and semipolar light-emitting devices grown on high-quality free-standing GaN substrates and provide an outlook for the opportunities and challenges that lie ahead.
Journal ArticleDOI
A GaN bulk crystal with improved structural quality grown by the ammonothermal method.
TL;DR: The improvement in the structural quality, together with the previous report on growth rate and scalability, demonstrates the commercial feasibility of the ammonothermal GaN growth.
Journal ArticleDOI
Nonpolar and Semipolar Group III Nitride-Based Materials
TL;DR: In this article, the key developments in nonpolar and semipolar nitride materials and devices are discussed, and a detailed overview of these materials and their growth in alternative orientations is presented.
References
More filters
Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi,Shigetoshi Sota,Maki Katsuragawa,Miho Komori,Hideo Takeuchi,Hiroshi Amano,Isamu Akasaki +6 more
TL;DR: In this article, the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells was studied and it was shown that an electric field of 1.08 MV/cm is induced by the piezolectric effect in strained Ga0.87In0.13N grown on GaN.
Journal ArticleDOI
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
TL;DR: In this paper, the authors investigated the emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures by means of modulation spectroscopy and assigned the static electroluminescence peak to recombination of excitons localized at certain potential minima in the quantum well.