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Journal ArticleDOI

Design and Analysis of CMOS Subharmonic Injection-Locked Frequency Triplers

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TLDR
In this article, a K-and V-band differential subharmonic injection-locked frequency triplers (ILFTs) are proposed, and models for the injection-locking range and the output phase noise are developed.
Abstract
K- and V-band CMOS differential subharmonic injection-locked frequency triplers (ILFTs) are proposed, analyzed, and designed. Based on the proposed ILFT structure, models for the injection-locking range and the output phase noise are developed. A K-band ILFT is designed and fabricated using 0.18-m standard CMOS technology. The measured injection-locking range is 1092 MHz with a dc power consumption of 0.45 mW and an input injection power of 4 dBm. The harmonic rejection ratios are 22.65, 30.58, 29.29, 40.35 dBc for the first, second, fourth, and fifth harmonics, respectively. The total injection-locking range of the -band ILFT can achieve 3915 MHz when the varactors are used and the dc power consumption is increased to 2.95 mW. A -band ILFT is also designed and fabricated using 0.13-m standard CMOS technology. The measured injection-locking range is 1422 MHz with 1.86-mW dc power consumption and 6-dBm input injection power. The injection-locking range of the proposed ILFT is similar to the tuning range of a conventional varactor-tuned bulk-CMOS voltage-controlled oscillator (VCO). Moreover, the proposed ILFT has a greater output power and a lower dc power consumption level than a VCO. As a result, it is feasible to use the proposed ILFT in low-power millimeter-wave synthesizers.

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Journal ArticleDOI

A 79 GHz Phase-Modulated 4 GHz-BW CW Radar Transmitter in 28 nm CMOS

TL;DR: A 28 nm CMOS Radar TX that modulates a 79 GHz carrier with a 2 Gsps Pseudo-Noise sequence is proposed that is functional up to 125°C still providing more than +7 dBm output power over the same RF BW.
Journal ArticleDOI

A BiCMOS W-Band 2×2 Focal-Plane Array With On-Chip Antenna

TL;DR: This work demonstrates the highest integration level of any silicon-based systems in the 94 GHz imaging band in a standard 0.18 μm SiGe BiCMOS process.
Journal ArticleDOI

Injection-Locked CMOS Frequency Doublers for $\mu$ -Wave and mm-Wave Applications

TL;DR: In this article, the same topology where a push-push pair injects a double frequency tone locking an autonomous differential oscillator is adopted, allowing the design of voltage-controlled oscillators running at a frequency lower than required with advantage in terms of signal spectral purity and frequency tuning range.
Proceedings ArticleDOI

An 85–95.2 GHz transformer-based injection-locked frequency tripler in 65nm CMOS

TL;DR: A W-band transformer-based injection-locked frequency tripler (T-ILFT) was designed and implemented in 65nm standard CMOS technology using a 0.8V supply voltage.
Proceedings Article

Injection-Locked CMOS Frequency Doublers for μ-Wave and mm-Wave Applications

TL;DR: In this article, the same topology where a push-push pair injects a double frequency tone locking an autonomous differential oscillator is adopted, allowing the design of voltage-controlled oscillators running at a frequency lower than required with advantage in terms of signal spectral purity and frequency tuning range.
References
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Journal ArticleDOI

A Study of Locking Phenomena in Oscillators

R. Adler
TL;DR: In this paper, a differential equation is derived which gives the oscillator phase as a function of time, and with the aid of this equation, the transient process of "pull-in" as well as the production of distorted beat note are described in detail.
Journal ArticleDOI

A study of locking phenomena in oscillators

R. Adler
TL;DR: In this article, a differential equation is derived which gives the oscillator phase as a function of time, and with the aid of this equation, the transient process of "pull-in" as well as the production of distorted beat note are described in detail.
Journal ArticleDOI

Superharmonic injection-locked frequency dividers

TL;DR: In this article, a first-order differential equation is derived for the noise dynamics of injection-locked oscillators, and a single-ended ILFD is designed in a 0.5-/spl mu/m CMOS technology operating at 1.8 GHz with more than 190 MHz locking range while consuming 3 mW of power.
Journal ArticleDOI

A unified model for injection-locked frequency dividers

TL;DR: In this article, the treatment of injection-locked frequency dividers (ILFDs) and regenerative systems is described, and the utility of the model is demonstrated in the calculation of both the steady-state and dynamic properties of ILFD systems, and subsequent computation of the corresponding phase noise spectrum.
Journal ArticleDOI

Millimeter-wave voltage-controlled oscillators in 0.13-/spl mu/m CMOS technology

TL;DR: This paper describes the design of CMOS millimeter-wave voltage controlled oscillators and shows the lumped element approach can be used even for VCOs operating near 100-GHz and it results a smaller circuit area.
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