Open Access
Design Of Analog Cmos Integrated Circuits
Reads0
Chats0
TLDR
The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.Abstract:
Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.read more
Citations
More filters
Proceedings ArticleDOI
VLSI Design of Analog DFT Processor for Demodulation of QAM-OFDM Signal
Anirban Ganguly,Ayan Banerjee +1 more
TL;DR: A 16-point analog DFT processor using radix-4 FFT algorithm is proposed which is used to demodulate 16 symbol QAM modulated OFDM and the VLSI hardware is current mode circuit which only uses cascode current mirror as circuit element.
Proceedings ArticleDOI
MIMO Systems with One-bit ADCs: Capacity Gains using Nonlinear Analog Operations
Farhad Shirani,Hamidreza Aghasi +1 more
TL;DR: This work studies the application of practically implementable nonlinear analog operations, prior to sampling and quantization at the ADCs, as a way to mitigate the rate-loss due to increased quantization error.
Proceedings ArticleDOI
A 0.5V Voltage-Combiner Based Pseudo Differential OTA Design in CMOS Using Weakly Inverted Transistors
TL;DR: A gain enhacement technique for a pseudo-differential OTA based on Voltage Combiner, suitable for Sub-1V applications is presented, using a Gm boosted Voltage combiner, which can produce gain more than 5.
Proceedings ArticleDOI
Current driver for MEMS angular sensor
TL;DR: In this article, a current driver for an integrated angular acceleration sensor readout circuit is presented, which consists of a voltage follower and an inverting amplifier to achieve a differential output.
References
More filters
Journal ArticleDOI
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Lai-Guo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui,Feng Miao,D. Y. Xing +24 more
TL;DR: In this paper, field effect transistors from single and few-layer rhenium disulfide were constructed and observed an anisotropic ratio of three to one along the two principle axes.
Journal ArticleDOI
All-Digital Self-Interference Cancellation Technique for Full-Duplex Systems
Elsayed Ahmed,Ahmed M. Eltawil +1 more
TL;DR: In this paper, the authors proposed a digital self-interference cancellation technique for full-duplex systems, which is shown to significantly mitigate the selfinterference signal as well as the associated transmitter and receiver impairments, more specifically, transceiver nonlinearities and phase noise.
Proceedings ArticleDOI
Adaptive-latency DRAM: Optimizing DRAM timing for the common-case
Donghyuk Lee,Yoongu Kim,Gennady Pekhimenko,Samira Khan,Vivek Seshadri,Kevin K. Chang,Onur Mutlu +6 more
TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.
Sungsik Lee,Arokia Nathan +1 more
TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI
Printed subthreshold organic transistors operating at high gain and ultralow power.
TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.