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Design Of Analog Cmos Integrated Circuits
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Citations
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Journal ArticleDOI
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Lai-Guo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui,Feng Miao,D. Y. Xing +24 more
TL;DR: In this paper, field effect transistors from single and few-layer rhenium disulfide were constructed and observed an anisotropic ratio of three to one along the two principle axes.
Journal ArticleDOI
All-Digital Self-interference Cancellation Technique for Full-duplex Systems
Elsayed Ahmed,Ahmed M. Eltawil +1 more
TL;DR: The overall performance is numerically investigated showing that using the proposed technique, the self-interference signal could be mitigated to ~3 dB higher than the receiver noise floor, which results in up to 76% rate improvement compared to conventional half-duplex systems at 20 dBm transmit power values.
Proceedings ArticleDOI
Adaptive-latency DRAM: Optimizing DRAM timing for the common-case
Donghyuk Lee,Yoongu Kim,Gennady Pekhimenko,Samira Khan,Vivek Seshadri,Kevin K. Chang,Onur Mutlu +6 more
TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.
Sungsik Lee,Arokia Nathan +1 more
TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI
Printed subthreshold organic transistors operating at high gain and ultralow power.
TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.
References
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Proceedings ArticleDOI
CS-based TIAs using inductive feedback approach in 90nm CMOS
TL;DR: In this paper, inductive feedback approach is applied for bandwidth extension of Common Source Transimpedance Amplifier and the effect of parasitic capacitances of the MOS transistor is reduced using this approach.
Journal ArticleDOI
A Portable Phase-Domain Magnetic Induction Tomography Transceiver with Phase-Band Auto-Tracking and Frequency-Sweep Capabilities
Chan Sam Park,Jiyun Jeon,Byungjoo Oh,Hee Young Chae,Kyeonghwan Park,Hungsun Son,Jae Joon Kim +6 more
TL;DR: This paper presents a portable magnetic induction tomography transceiver integrated circuit to miniaturize conventional equipment-based MIT systems through single-chip transceiver implementation.
Journal ArticleDOI
New Programmable CMOS Fuzzifier and C2V Circuits Applicable in FLC Chip for Signal Processing of MEMS Glucose Sensors
TL;DR: The design and simulation of improved circuits of Fuzzifier and capacitance to voltage (C2V) converter are presented and a C2V circuit to convert capacitance variations (from MEMS glucose microsensor) to voltage values as classic data is proposed.
Proceedings ArticleDOI
Analog computation methods with the help of analog and pseudo-digital carry signals
TL;DR: New methods of handling ex-ceedings of the supply range in analog computation stages are described as pseudo-digital and analog carry signals and used to regulate the gain of the stage where they occur as well as all computation stages that follow.
Dissertation
Approximate Computing - Reconsidering the Analog Computer
TL;DR: It is investigated that under what conditions analog approximate multiply-accumulate devices (MACs) are more energy efficient as compared to digital (approximate) MACs and a generic metric is proposed which can be used to measure all types of MACs.