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Design Of Analog Cmos Integrated Circuits
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Citations
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Journal ArticleDOI
The Analysis and Suppressing of Non-Uniformity in a High-Speed Spike-Based Image Sensor.
TL;DR: The experimental results show that, based on the spike frequency method, the standard deviation of the image decreases from 18.4792 to 0.5683 in the uniform bright light by using the calibration algorithm, and because of time mismatch and temporal noise, the standards deviation changes from 27.4252 to 27.4977.
Journal ArticleDOI
Post-Voltage-Boost Circuit-Supported Single-Ended Class-B Amplifier for Piezoelectric Transducer Applications.
TL;DR: A designed post-voltage-boost circuit-supported class-B amplifier used for mobile ultrasound applications was developed to increase the acoustic performance of piezoelectric transducers.
Proceedings ArticleDOI
Designs of All Digital Phase Locked Loop
TL;DR: Various approaches to design the blocks of ADPLL till now adopted are presented and review of advantages of an All-Digital phase lock loop (ADPLL) over an analog phase locked loop (APLL) in terms of stability, programmability is studied.
Journal ArticleDOI
CMOS RF Transmitters with On-Chip Antenna for Passive RFID and IoT Nodes
TL;DR: The performances of two RF transmitters, monolithically integrated with their antennas on a single CMOS microchip fabricated in a standard 0.35 µm process, are presented, allowing the usage as low-power transmitters for IoT nodes.
Journal ArticleDOI
A 0.7 V, 2.7 μW, 12.9 ppm/° C over 180° C CMOS subthreshold voltage reference
TL;DR: An all-CMOS, low-power, wide-temperature-range, curvature-compensated voltage reference is presented, which achieves a measured temperature coefficient of 12.9 ppm/°C and utilizes an innovative trimming methodology whereby two trimmable resistors enable the tuning of both the overall slope and non-linearities of the temperature sensitivity.
References
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Journal ArticleDOI
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Lai-Guo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui,Feng Miao,D. Y. Xing +24 more
TL;DR: In this paper, field effect transistors from single and few-layer rhenium disulfide were constructed and observed an anisotropic ratio of three to one along the two principle axes.
Journal ArticleDOI
All-Digital Self-Interference Cancellation Technique for Full-Duplex Systems
Elsayed Ahmed,Ahmed M. Eltawil +1 more
TL;DR: In this paper, the authors proposed a digital self-interference cancellation technique for full-duplex systems, which is shown to significantly mitigate the selfinterference signal as well as the associated transmitter and receiver impairments, more specifically, transceiver nonlinearities and phase noise.
Proceedings ArticleDOI
Adaptive-latency DRAM: Optimizing DRAM timing for the common-case
Donghyuk Lee,Yoongu Kim,Gennady Pekhimenko,Samira Khan,Vivek Seshadri,Kevin K. Chang,Onur Mutlu +6 more
TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.
Sungsik Lee,Arokia Nathan +1 more
TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI
Printed subthreshold organic transistors operating at high gain and ultralow power.
TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.