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Design Of Analog Cmos Integrated Circuits

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The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
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Citations
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Proceedings ArticleDOI

A low voltage operational amplifier cell with extended input common mode range for high voltage current sensing applications

TL;DR: In this article, a new operational amplifier cell for high voltage current sensing applications is presented, which employs a fully low voltage input stage capable of tracking input common modes (CMs) ranging from GND rail to above the supply rail.
Journal ArticleDOI

Gain Boosted Folded Cascode Op-Amp with Capacitor Coupled Auxiliary Amplifiers

TL;DR: A novel gain boosted folded cascode Op-Amp using simple single stage auxiliary amplifiers is presented and results in a 0.18μm CMOS technology show a DC gain enhancement of about 20dB while output swing, slew rate, settling time, phase margin and gain-bandwidth retain almost as the same as previous folded cascodes.
Journal ArticleDOI

Design and Analysis of a 1.8-GHz Open-Loop Modulator for Phase Modulation and Frequency Synthesis Using TDC-Based Calibration

TL;DR: In this paper, a nonlinearity calibration technique is proposed for an open-loop phase modulator (PM) for wideband phase modulation, and for multiple-output, low-jitter clock generation.
Journal ArticleDOI

Compact CMOS Miller OpAmp With High EMI-Immunity

TL;DR: In this work, a CMOS Miller Operational Amplifier with high immunity to electromagnetic interference (EMI) is proposed and the performance result shows that the maximum EMI-induced input offset voltage for the proposed compact Miller OpAmp with source degeneration resistance is 4.6 mV.
References
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Journal ArticleDOI

All-Digital Self-Interference Cancellation Technique for Full-Duplex Systems

TL;DR: In this paper, the authors proposed a digital self-interference cancellation technique for full-duplex systems, which is shown to significantly mitigate the selfinterference signal as well as the associated transmitter and receiver impairments, more specifically, transceiver nonlinearities and phase noise.
Proceedings ArticleDOI

Adaptive-latency DRAM: Optimizing DRAM timing for the common-case

TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.

TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI

Printed subthreshold organic transistors operating at high gain and ultralow power.

TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.