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Design Of Analog Cmos Integrated Circuits
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The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.Abstract:
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Citations
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Journal ArticleDOI
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Lai-Guo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui,Feng Miao,D. Y. Xing +24 more
TL;DR: In this paper, field effect transistors from single and few-layer rhenium disulfide were constructed and observed an anisotropic ratio of three to one along the two principle axes.
Journal ArticleDOI
All-Digital Self-interference Cancellation Technique for Full-duplex Systems
Elsayed Ahmed,Ahmed M. Eltawil +1 more
TL;DR: The overall performance is numerically investigated showing that using the proposed technique, the self-interference signal could be mitigated to ~3 dB higher than the receiver noise floor, which results in up to 76% rate improvement compared to conventional half-duplex systems at 20 dBm transmit power values.
Proceedings ArticleDOI
Adaptive-latency DRAM: Optimizing DRAM timing for the common-case
Donghyuk Lee,Yoongu Kim,Gennady Pekhimenko,Samira Khan,Vivek Seshadri,Kevin K. Chang,Onur Mutlu +6 more
TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.
Sungsik Lee,Arokia Nathan +1 more
TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI
Printed subthreshold organic transistors operating at high gain and ultralow power.
TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.
References
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Journal ArticleDOI
A novel high-speed CMOS circuit based on a gang of capacitors
TL;DR: In this article, a circuit that contains a gang of capacitors sharing their charge with each other is proposed as an alternative to long N-channel MOS and P-channel mOS stacks.
Journal ArticleDOI
A new 8-fold CMOS current-mode sawtooth folding amplifier
TL;DR: In this article, a new 8-fold current-mode sawtooth folding amplifier was proposed to reduce the number of current mirrors in the signal path between the input and the output.
Proceedings ArticleDOI
Design of High Resolution Delta Sigma Modulator in 180 nm CMOS technology
TL;DR: The designed modulator block comprises of a high gain Operational Transconductance Amplifier of the folded cascode type providing a DC gain of 91dB and phase margin of 60° which is better than previously published results in the similar domain.
Journal Article
Design of high speed pipelined ADC System
TL;DR: This project report describes the design of a high-speed ADC system designed with a parallel Analog-to-digital converter architecture, also called time interleaving, which aims to increase the sampling speed of the system.
Low-voltage continuous-time linear equalizer for digital video applications
TL;DR: This thesis presents a low-voltage continuous-time linear equalizer for the digital video application of 1080p HD video with a data rate of 3 Gbps.