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Design Of Analog Cmos Integrated Circuits
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The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.Abstract:
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Citations
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Journal ArticleDOI
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Lai-Guo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui,Feng Miao,D. Y. Xing +24 more
TL;DR: In this paper, field effect transistors from single and few-layer rhenium disulfide were constructed and observed an anisotropic ratio of three to one along the two principle axes.
Journal ArticleDOI
All-Digital Self-interference Cancellation Technique for Full-duplex Systems
Elsayed Ahmed,Ahmed M. Eltawil +1 more
TL;DR: The overall performance is numerically investigated showing that using the proposed technique, the self-interference signal could be mitigated to ~3 dB higher than the receiver noise floor, which results in up to 76% rate improvement compared to conventional half-duplex systems at 20 dBm transmit power values.
Proceedings ArticleDOI
Adaptive-latency DRAM: Optimizing DRAM timing for the common-case
Donghyuk Lee,Yoongu Kim,Gennady Pekhimenko,Samira Khan,Vivek Seshadri,Kevin K. Chang,Onur Mutlu +6 more
TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.
Sungsik Lee,Arokia Nathan +1 more
TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI
Printed subthreshold organic transistors operating at high gain and ultralow power.
TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.
References
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Spike-Based Synaptic Plasticity in Silicon: Design, Implementation, Application, and Challenges This paper reviews challenges and progress in implementing timing-based neuronal learning mechanisms in silicon.
TL;DR: In this paper, analog very large-scale integration (VLSI) circuit implementations of multiple synaptic plasticity rules, ranging from phenomenological ones (e.g., based on spike timing, mean firing rates, or both) to biophysically realistic ones, were described.
Journal ArticleDOI
A 1.2-pJ/bit 16-Gb/s 60-GHz OOK Transmitter in 65-nm CMOS for Wireless Network-On-Chip
TL;DR: In this paper, a 60 GHz on-off keying (OOK) transmitter for wireless network-on-chip (WiNoC) applications is presented, which consists of a drive amplifier (DA), a high-speed OOK modulator, and a transformer-coupled voltage-controlled oscillator.
Journal ArticleDOI
A Home Sleep Apnea Screening Device With Time-Domain Signal Processing and Autonomous Scoring Capability
Jiayi Jin,Edgar Sanchez-Sinencio +1 more
TL;DR: Test results suggest that the proposed low-cost single-channel apnea screening solution can be a valuable screening solution for the broader public with undiagnosed apnea conditions.
Journal ArticleDOI
Analysis and Design of a High-Order Discrete-Time Passive IIR Low-Pass Filter
TL;DR: A discrete-time IIR low-pass filter that achieves a high-order of filtering through a charge-sharing rotation and its sampling rate is then multiplied through pipelining, thus being compatible with digital nanoscale technology.
Journal ArticleDOI
Impedance and Noise of Passive and Active Dry EEG Electrodes: A Review
TL;DR: In this paper, the impedance and noise of passive and active dry EEG electrodes are compared to that of active wet electrodes and EEG amplifiers, and the authors investigate bottlenecks and propose a guideline for future work on active and passive electrodes.