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Design Of Analog Cmos Integrated Circuits
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Citations
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Journal ArticleDOI
A Survey on Security Issues in Modern Implantable Devices: Solutions and Future Issues
E. Fredua Kwarteng,Mumin Cebe +1 more
TL;DR: The current threats, security goals, and proposed solutions by comparing them with their strengths and limitations are reviewed and the emerging IMD technologies and innovative ideas for new designs and implementations to improve the security of IMDs are highlighted.
Low-voltage continuous-time linear equalizer for digital video applications
TL;DR: This thesis presents a low-voltage continuous-time linear equalizer for the digital video application of 1080p HD video with a data rate of 3 Gbps.
Proceedings ArticleDOI
Design and Performance Evaluation of Differential Ring Oscillators for Cognitive Radio receiver
Gaurav Sharma,Arun Kishor Johar,Tangudu Bharat Kumar,Deepak Gupta,Jai Kumar Bhatt,Dharmendar Boolchandani +5 more
TL;DR: In this article, three different configurations of Differential Ring Oscillator (DRO) are designed and compared in terms of tuning range, phase noise and power dissipation, and it is evident that three stage DRO is suitable choice for low power, small area targeted frequency synthesizer design for Cognitive Radio receiver.
Journal ArticleDOI
Design of High Speed Phase Frequency Detector in 0.18 μm CMOS Process for PLL Application
TL;DR: In this article, the phase frequency detectors (PFDs) are proposed by using the two different structures of D Flip-Flop that is the traditional D Flip Flop and modified D FlipFlop with a NAND gate which can overcome the speed and area limitations of the conventional PFD.
Journal ArticleDOI
Optimal Number of Measurements in a Linear System With Quadratically Decreasing SNR
Yang Lu,Wei Dai,Yonina C. Eldar +2 more
TL;DR: In this article, the authors considered the design of a linear sensing system with a fixed energy budget assuming that the sampling noise is the dominant noise source and the energy constraint implies that the signal energy per measurement decreases linearly with the number of measurements.
References
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Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Lai-Guo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui,Feng Miao,D. Y. Xing +24 more
TL;DR: In this paper, field effect transistors from single and few-layer rhenium disulfide were constructed and observed an anisotropic ratio of three to one along the two principle axes.
Journal ArticleDOI
All-Digital Self-Interference Cancellation Technique for Full-Duplex Systems
Elsayed Ahmed,Ahmed M. Eltawil +1 more
TL;DR: In this paper, the authors proposed a digital self-interference cancellation technique for full-duplex systems, which is shown to significantly mitigate the selfinterference signal as well as the associated transmitter and receiver impairments, more specifically, transceiver nonlinearities and phase noise.
Proceedings ArticleDOI
Adaptive-latency DRAM: Optimizing DRAM timing for the common-case
Donghyuk Lee,Yoongu Kim,Gennady Pekhimenko,Samira Khan,Vivek Seshadri,Kevin K. Chang,Onur Mutlu +6 more
TL;DR: Adaptive-Latency DRAM (AL-DRAM), a mechanism that adoptively reduces the timing parameters for DRAM modules based on the current operating condition, is proposed and shown that dynamically optimizing the DRAM timing parameters can reliably improve system performance.
Journal ArticleDOI
Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.
Sungsik Lee,Arokia Nathan +1 more
TL;DR: A Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime at low supply voltages and ultralow power is reported, minimizes power consumption by operating near the off-state limit.
Journal ArticleDOI
Printed subthreshold organic transistors operating at high gain and ultralow power.
TL;DR: A high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit that delivered gain near the theoretical limit at a power below 1 nanowatt and detected electrophysiological signals from the skin with a wearable device is reported.