Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz
Yu-Ming Lin,Hsin-Ying Chiu,Keith Jenkins,Damon B. Farmer,Phaedon Avouris,Alberto Valdes-Garcia +5 more
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TLDR
In this paper, a dual-gate graphene field effect transistor with a cutoff frequency of 50 GHz is presented, which is the highest frequency reported for any graphene transistor, and it also exceeds that of Si MOS field effect transistors at the same gate length.Abstract:
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/V · s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.read more
Citations
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Graphene: electronic and photonic properties and devices.
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References
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TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
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TL;DR: In this article, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated, where a conventional top-down CMOS-compatible process flow is applied.
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Operation of Graphene Transistors at Gigahertz Frequencies
Yu-Ming Lin,Keith A. Jenkins,Alberto Valdes-Garcia,Joshua P. Small,Damon B. Farmer,Phaedon Avouris +5 more
TL;DR: Graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed, indicating a FET-like behavior for graphene transistors.
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Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
Seyoung Kim,Junghyo Nah,Insun Jo,Davood Shahrjerdi,Luigi Colombo,Zhen Yao,Emanuel Tutuc,Sanjay K. Banerjee +7 more
TL;DR: In this paper, dual-gated graphene field effect transistors using Al2O3 as top-gate dielectric were constructed using a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3.