Journal ArticleDOI
Effect of Plasma Fluorination in p-Type SnO TFTs: Experiments, Modeling, and Simulation
Kadiyam Rajshekar,Hsiao-Hsuan Hsu,Koppolu Uma Mahendra Kumar,P. Sathyanarayanan,V. Velmurugan,Chun-Hu Cheng,D. Kannadassan +6 more
TLDR
In this paper, the authors reported the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT).Abstract:
With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/HfO2 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of ~107 and low substhreshold swing of ~ 100 mV/dec and field-effect mobility ( $\mu _{\text {FE}}$ ) of 2.13 cm2V−1s−1.read more
Citations
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Journal ArticleDOI
Progress and challenges in p-type oxide-based thin film transistors
TL;DR: In this article, the progress and challenges in p-type oxide-based TFTs are reviewed, with the emphasis on the potential ptype oxide candidates as copper oxide, tin oxide and nickel oxide.
Journal ArticleDOI
High-performance vacuum-processed metal oxide thin-film transistors: A review of recent developments
Journal ArticleDOI
Advancements for organic thin film transistors: Structures, materials, performance parameters, influencing factors, models, fabrication, reliability and applications
TL;DR: In this article, the structural variation between top and bottom contact organic TFTs is examined and analytical models concerning to empirical parameters are discussed for forecasting the performance of organic transistor before a real realization.
Journal ArticleDOI
High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring.
TL;DR: In this article, the p-channel CTSGO TFT with UV/O3 treatment exhibited the field effect mobility (μFE) of 1.75 ± 0.15 cm2 V-1 s-1 and an on/off current ratio (ION/IOFF) of ∼104 at a low operating voltage of -5 V.
Journal ArticleDOI
Physical Modeling of p -Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors
Kadiyam Rajshekar,Hsiao-Hsuan Hsu,Koppolu Uma Mahendra Kumar,P. Sathyanarayanan,V. Velmurugan,Chun-Hu Cheng,D. Kannadassan +6 more
TL;DR: In this paper, the dynamic response of a p-type Al-doped SnO active channel thin film transistors (TFTs) for the potential application of ultra-high definition (UHD) displays is presented.
References
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
The surface and materials science of tin oxide
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TL;DR: A review of surface science studies of single crystal surfaces, but selected studies on powder and polycrystalline films are also incorporated in order to provide connecting points between surface sciences studies with the broader field of materials science of tin oxide as discussed by the authors.