Journal ArticleDOI
Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density
K. Remashan,K.N. Bhat +1 more
TLDR
In this paper, the ability of octa decyl thiol (ODT) compound in passivating Gallium Arsenide (GaAs) surfaces is studied by comparing the XPS spectra on the ODT treated and untreated GaAs samples and by comparing electrical characteristics of Schottky diodes and MIS capacitors fabricated on them.About:
This article is published in Thin Solid Films.The article was published on 1999-03-26. It has received 17 citations till now. The article focuses on the topics: Gallium arsenide.read more
Citations
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Journal ArticleDOI
Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.
Journal ArticleDOI
Thiols Passivate Recombination Centers in Colloidal Quantum Dots Leading to Enhanced Photovoltaic Device Efficiency
TL;DR: Exposure to thiols is found to improve EQE from 5 to 22% and, combined with the improvement in V(oc), improve power conversion efficiency to 2.6% under 76 mW/cm(2) at 1 microm wavelength, consistent with recent reports in photoconductive PbS CQD photodetectors that thiol exposure substantially removes deep electron traps.
Journal ArticleDOI
Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).
Christine L. McGuiness,Andrey Shaporenko,Carole K. Mars,Sundararajan Uppili,and Michael Zharnikov,David L. Allara +5 more
TL;DR: Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice, which shows an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces.
Journal ArticleDOI
Molecular Self-Assembly at Bare Semiconductor Surfaces: Investigation of the Chemical and Electronic Properties of the Alkanethiolate−GaAs(001) Interface
Christine L. McGuiness,Andrey Shaporenko,Michael Zharnikov,and Amy V. Walker,David L. Allara +4 more
TL;DR: In this article, a combination of high-resolution X-ray photoelectron spectroscopy (HRXPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and Raman scattering have been used to characterize the bonding and electronic properties of the interfaces formed by ambient-temperature, solution self-assembly of octadecanethiol and dodecanethiol under oxygen-free conditions on GaAs(001) surfaces.
Journal ArticleDOI
Energy level and band alignment for GaAs-alkylthiol monolayer-Hg junctions from electrical transport and photoemission experiments.
Guy Nesher,Ayelet Vilan,Hagai Cohen,David Cahen,Fabrice Amy,Calvin K. Chan,Jaehyung Hwang,Antoine Kahn +7 more
TL;DR: From current-voltage measurements, it appears likely that, for both types of junctions, electrons are the main carrier type, although holes may contribute significantly to the transport in the p-GaAs system.
References
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Journal ArticleDOI
Spontaneously organized molecular assemblies. 4. Structural characterization of n-alkyl thiol monolayers on gold by optical ellipsometry, infrared spectroscopy, and electrochemistry
Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
TL;DR: In this paper, a passivated nonradiative recombination center at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor was proposed to increase the current gain of the device at low collector currents.
Journal ArticleDOI
Effects of passivating ionic films on the photoluminescence properties of GaAs
TL;DR: In this paper, the passivating effects of spincoated films of Na2S⋅9H2O on GaAs surfaces have been studied using roomtemperature photoluminescence (PL) and low-temperature PL spectroscopy.
Journal ArticleDOI
Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes
TL;DR: In this paper, the dark currentvoltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments were investigated.
Related Papers (5)
Stable Surface Coating of Gallium Arsenide with Octadecylthiol Monolayers
Klaus Adlkofer and,Motomu Tanaka +1 more