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Effects of plasma processing on the microstructural properties of silicon powders

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TLDR
In this article, the effects of plasma processing conditions on the microstructural properties of silicon powders are presented, which reveal an increase in hydrogen content and a reduction in volume/surface ratio as the modulation frequency of RF power increases.
Abstract
The effects of plasma processing conditions on the microstructural properties of silicon powders are presented. Hydrogenated nanophase silicon powders were prepared using low-pressure and low-temperature square wave modulated RF plasma (13.56 MHz) using pure silane gas. Plasma parameters such as pressure, RF power, plasma modulation frequency, and gas flow rate were varied. In situ analysis by quadrupolar mass spectroscopy and ex situ analysis of the silicon powders by Fourier transform infrared spectroscopy (FTIR) and thermal desorption spectrometry of hydrogen were performed. The thermal desorption spectrometry results show the fundamental differences between the concentrations of hydrogen weakly and strongly bonded in silicon powders as compared to amorphous silicon films. The FTIR analysis also determined the microstructural characteristics of powders and hence their volume/surface ratio. This parameter was determined from the balance of Pj probabilities of having one of the Hj-Si-Si4-j bond arrangements in the powder particles. These results reveal an increase in hydrogen content and a reduction in volume/surface ratio as the modulation frequency of RF power increases. In consequence, higher compactness of silicon powders is associated with long particle residence times inside the plasma as a result of ion bombardment. TEM analysis indicated a considerable dispersion of particle size and some degree of structure of the silicon powder characterized by intergrain linkage. We point out the dominant presence of hydrogen on the particle surfaces (external voids), which may cause the high reactivity of grains, increasing the degree of intergrain linkage.

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References
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Journal ArticleDOI

Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition

TL;DR: In this paper, the influence of radio frequency (rf) power and pressure on deposition rate and structural properties of hydrogenated amorphous silicon thin films, prepared by rf glow discharge decomposition of silane, have been studied by phase modulated ellipsometry and Fourier transform infrared spectroscopy.
Journal ArticleDOI

Ellipsometric study of a-Si:H thin films deposited by square wave modulated rf glow discharge

TL;DR: In this article, thin films of hydrogenated amorphous silicon (a−Si:H), deposited by square wave modulated (SQWM) rf silane discharges, have been studied through spectroscopic and real-time phase modulated ellipsometry.
Journal ArticleDOI

Growth and morphology of carbon grains

TL;DR: In this paper, carbon grains less than 1 μm in diameter have been formed in low pressure rare gas discharges using graphite electrodes and audio frequency excitation using Mie etching scattering to determine growth rates and ex situ using scanning and transmission electron microscopy to quantitatively examine their morphology.
Journal ArticleDOI

Real time controlled rf reactor for deposition of a-Si:H thin films

TL;DR: In this paper, an in situ ellipsometer and an optical emission spectroscopy system were used for the deposition of hydrogenated amorphous silicon (a-Si:H) thin films and related alloys.
Journal ArticleDOI

Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges

TL;DR: In this paper, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of hydrogenated amorphous silicon (a•Si:H) from SQWM rf discharges through their influence on powder particle formation.
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