Journal ArticleDOI
Electronic properties of two-dimensional in-plane heterostructures of WS2/WSe2/MoS2
Cong Mu,Wei Wei,Jinjin Li,Baibiao Huang,Ying Dai +4 more
- Vol. 5, Iss: 4, pp 046307
TLDR
In this article, the electronic properties of in-plane heterostructure of WS2/WSe2/MoS2 are studied by means of the first-principles calculations based on density functional theory.Abstract:
In-plane heterostructure of two-dimensional (2D) transition metal dichalcogenides (TMDs) means the formation of one-dimensional (1D) interfaces, and promises exciting properties. The electronic properties of in-plane heterostructure of WS2/WSe2/MoS2 are studied by means of the first-principles calculations based on density functional theory (DFT). We find that the band gap can be continuously tuned by changing the length of the components of the in-plane heterostructure, which can be explained by confinement effects. Lattice mismatch induced strain play a crucial role in determining the electronic properties, such as direct-indirect band gap transition, band alignment and the band offset of band edge. Our results suggest that the rich and tunable electronic properties endow in-plane heterostructure of WS2/WSe2/MoS2 great potential in applications in such as light emitting and photovoltaics.read more
Citations
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Journal ArticleDOI
Recent Advances in 2D Lateral Heterostructures.
TL;DR: The lateral heterostructures are considered to be easier for planner integration and exhibit unique electronic and photoelectronic properties and are promising candidates for new device designs in the fields of integrated circuits and quantum sciences.
Journal ArticleDOI
Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors
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Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities.
TL;DR: In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices.
Journal ArticleDOI
Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides.
TL;DR: Advances in 1D heterojunctions are reviewed, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX 2 (with M’s, Mo, W, W and X), and how the interfacial states can be characterized and utilized, and to address how the interfaces depend on edge geometries or strain.
Journal ArticleDOI
Effect of valley, spin, and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides
TL;DR: In this article, an atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides is presented, and the electronic states are described by the tight-binding model and computed using a computational box with periodic boundary conditions including up to millions of atoms.
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