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Journal ArticleDOI

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

TLDR
The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface, and direct growth favors the thermodynamically preferred TMDC alloys.
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

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Citations
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Journal ArticleDOI

2D materials and van der Waals heterostructures

TL;DR: Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
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Recent Advances in Ultrathin Two-Dimensional Nanomaterials

TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
Journal ArticleDOI

2D transition metal dichalcogenides

TL;DR: In this article, the authors examined the methods used to synthesize transition metal dichalcogenides (TMDCs) and their properties with particular attention to their charge density wave, superconductive and topological phases, along with their applications in devices with enhanced mobility and with the use of strain engineering to improve their properties.
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Van der Waals heterostructures and devices

TL;DR: In this paper, the authors review the recent progress and challenges of 2D van der Waals interactions and offer a perspective on the exploration of 2DLM-based vdWHs for future application in electronics and optoelectronics.
References
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Journal ArticleDOI

Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

TL;DR: Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer, and TEM images verify that the synthesized MoS (2) sheets are highly crystalline.
Journal ArticleDOI

Bandgap engineering of strained monolayer and bilayer MoS2.

TL;DR: A demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides, with pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap.
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High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

TL;DR: This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
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Extraordinary room-temperature photoluminescence in triangular WS2 monolayers.

TL;DR: The direct synthesis of WS2 monolayers with triangular morphologies and strong room-temperature photoluminescence (PL) is described and the structure and chemical composition of the platelet edges appear to be critical for PL enhancement.
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