Journal ArticleDOI
Epitaxial Mn2.5Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices
F. Wu,Shigemi Mizukami,D. Watanabe,Hiroshi Naganuma,Mikihiko Oogane,Yasuo Ando,Terunobu Miyazaki +6 more
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TLDR
In this paper, the epitaxial growth and magnetic properties of Mn2.5Ga thin films, which were deposited on Cr/MgO single crystal substrates by magnetron sputtering, were reported.Abstract:
We report on epitaxial growth and magnetic properties of Mn2.5Ga thin films, which were deposited on Cr/MgO single crystal substrates by magnetron sputtering. X-ray diffraction results revealed the epitaxial relationships as Mn2.5Ga(001)[100]∥Cr(001)[110]∥MgO(001)[100]. The presence of (002) and (011) superlattice peaks indicates that the films were crystallized into DO22 ordered structures. The perpendicular magnetic anisotropy (PMA) properties were found to be related to the extent of DO22 chemical ordering. A giant PMA (Kueff=1.2×107 erg/cm3) and low saturation magnetization (Ms=250 emu/cm3) can be obtained for the film with highest chemical ordering parameter (S=0.8).read more
Citations
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Simple rules for the understanding of Heusler compounds
TL;DR: Heusler compounds as discussed by the authors are a remarkable class of intermetallic materials with 1:1:1 or 2:1-1 composition comprising more than 1500 members, and their properties can easily be predicted by the valence electron count.
Patent
Magnetoresistive element and magnetic memory
Tadaomi Daibou,Junichi Ito,Tadashi Kai,Minoru Amano,H. Yoda,Terunobu Miyazaki,Shigemi Mizukami,K. Ando,Kay Yakushiji,Shinji Yuasa,Hitoshi Kubota,Akio Fukushima,Taro Nagahama,Takahide Kubota +13 more
TL;DR: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second nonmagnetic layer placed between the first and the second magnetoresists; and a second interfacial magnetic layer between the second and the nonmagians as mentioned in this paper.
Journal ArticleDOI
Future perspectives for spintronic devices
TL;DR: Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly as mentioned in this paper, which has led to the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer.
Journal ArticleDOI
Theory of isolated magnetic skyrmions: From fundamentals to room temperature applications
TL;DR: The first rigorous criteria to distinguish stray field from DMI skyrmions is established, resolving a major dispute in the community and discovering new phases, such as bi-stability, a phenomenon unknown in magnetism so far.
Journal ArticleDOI
Long-lived ultrafast spin precession in manganese alloys films with a large perpendicular magnetic anisotropy.
Shigemi Mizukami,F. Wu,Akimasa Sakuma,Jakob Walowski,D. Watanabe,Takahide Kubota,Xuefeng Zhang,Hiroshi Naganuma,Mikihiko Oogane,Yasuo Ando,Terunobu Miyazaki +10 more
TL;DR: First-principles calculations well describe both low α and large K(u) for these alloys, and the damping constant α, characterizing macroscopic spin relaxation and being a key factor in spin-transfer-torque systems, is not larger than 0.008 for the δ=1.46 (0.88) film.
References
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Journal ArticleDOI
Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
Stéphane Mangin,Dafiné Ravelosona,Jordan A. Katine,Matthew J. Carey,Bruce D. Terris,Eric E. Fullerton +5 more
TL;DR: In this paper, the authors describe an experimental demonstration of current-induced magnetic reversal of nanopillars with perpendicular anisotropy and high coercive fields, and the best results are observed for Co/Ni multilayers, which have higher giant magnetoresistance values and spin-torque efficiencies than Co/Pt multilayer.
Journal ArticleDOI
Perpendicular magnetic anisotropy in Pd/Co and Pt/Co thin‐film layered structures
TL;DR: In this paper, the authors describe magnetization, resistivity, and x-ray diffraction data that consistently support sharper interfaces in Pd/Co thin-film layered structures (LS) than in Pt/Co LS.
Journal ArticleDOI
Spin-torque oscillator using a perpendicular polarizer and a planar free layer
D. Houssameddine,Ursula Ebels,B. Delaet,Bernard Rodmacq,I. Firastrau,F. Ponthenier,M. Brunet,C. Thirion,Jean-Philippe Michel,L. Prejbeanu-Buda,M.-C. Cyrille,O. Redon,Bernard Dieny +12 more
TL;DR: This work presents the realization of an STO that contains a perpendicular spin current polarizer combined with an in-plane magnetized free layer, characterized by high-frequency oscillations of the free-layer magnetization, consistent with out-of-plane steady-state precessions induced at the threshold current by a spin-transfer torque from perpendicularly polarized electrons.
Journal ArticleDOI
Perpendicular recording media for hard disk drives
TL;DR: Perpendicular recording technology has recently been introduced in hard disk drives for computer and consumer electronics applications as mentioned in this paper, but it has not yet been widely adopted in the general computer domain and it is difficult to find a product with perpendicular recording that has competing performance, reliability, and price advantage over the prevalent longitudinal recording technology.
Journal ArticleDOI
Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
Naoki Nishimura,Tadahiko Hirai,Akio Koganei,Takashi Ikeda,Kazuhisa Okano,Yoshinobu Sekiguchi,Yoshiyuki Osada +6 more
TL;DR: In this paper, a magnetic tunnel junction device using perpendicular magnetization films designed for magnetic random access memory (MRAM) was presented, where stable and uniform magnetization states were observed in 0.3 μm×0.3