Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures

TLDR: In this article, the fundamental technological processes for the fabrication of one and zero-dimensional III-V compound semiconductor structures which are developed for optical spectroscopy were discussed, using high-resolution electron beam lithography and dry etching of quantum well layers.

Abstract: The paper discusses the fundamental technological processes for the fabrication of one- and zero-dimensional III–V compound semiconductor structures which are developed for optical spectroscopy. Using high-resolution electron beam lithography, two different approaches to the fabrication of quantum wires and dots have been taken: By electron beam lithography and dry etching of quantum well layers lateral confinement of the electron hole pairs can be obtained. Optical investigations of excitonic transitions in these structures, however, show that the properties are largely determined by surface effects. By the combination of implantation induced interdiffusion of quantum wells with high resolution electron-beam lithography on the other hand we define buried quantum wires and dots. Optical spectra from these structures show pronounced energetic shifts which can be traced to changes of the quantum well composition and to lateral quantization.