Journal ArticleDOI
Ferroelectric Negative Capacitance Field Effect Transistor
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This article is published in Advanced electronic materials.The article was published on 2018-11-01. It has received 101 citations till now. The article focuses on the topics: Field-effect transistor & Negative impedance converter.read more
Citations
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Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Ferroelectric polymers for non‐volatile memory devices: a review
Journal ArticleDOI
Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors
Tengzhou Yang,Qian Wu,Fuhua Dai,Kairong Huang,Huihua Xu,Chenning Liu,Changdong Chen,Sujuan Hu,Xiaoci Liang,Xuying Liu,Yong-Young Noh,Chuan Liu +11 more
Journal ArticleDOI
Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities.
TL;DR: In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices.
Journal ArticleDOI
Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices.
TL;DR: In this article, a review of 2D semiconductor/ferroelectric heterostructures is presented, covering their working mechanisms, device construction, applications, and challenges, and emerging opportunities of CMOS-process-compatible two-dimensional semiconductor and ferroelectric transistor structure devices for the development of a rich variety of applications.
References
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Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
Journal ArticleDOI
Ultrasensitive photodetectors based on monolayer MoS2.
TL;DR: Ultraensitive monolayer MoS2 phototransistors with improved device mobility and ON current are demonstrated, showing important potential for applications in MoS 2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.
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