Journal ArticleDOI
Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs
Yeong Je Jeong,Jeong Yong Yang,Chan Ho Lee,Ryubin Park,Gyeongryul Lee,Roy B. Chung,Geonwook Yoo +6 more
TLDR
In this article, the authors demonstrate the lateral metal-oxidesemiconductor field effect transistors (MOSFETs) with β-Ga2O3 film (thickness) grown on a c-plane sapphire substrate by a hydride vapor phase epitaxy (HVPE) method using a CF4-based plasma treatment.About:
This article is published in Applied Surface Science.The article was published on 2021-08-30. It has received 16 citations till now. The article focuses on the topics: Ohmic contact & Contact resistance.read more
Citations
More filters
Journal ArticleDOI
β-Ga2O3-Based Power Devices: A Concise Review
Yufeng Guo,Pavol Babos +1 more
TL;DR: In this article , the authors selectively summarized the recent advances on the experimental and theoretical demonstration of β-Ga2O3-based power devices, including Schottky barrier diodes and field effect transistors, aiming for an inherent understanding of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments.
Journal ArticleDOI
First Demonstration of Hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma Surface Doping
TL;DR: In this article , a phase-pure gallium oxide (ε-Ga2O3) based metal-oxidesemiconductor field effect transistors (MOSFETs) for the first time was demonstrated.
Journal ArticleDOI
Heteroepitaxy of ε-Ga2O3 thin films grown on AlN/Si(1 1 1) templates by metal–organic chemical vapor deposition
TL;DR: In this paper , the growth pressure is found to be an important parameter which influences the phase-purity and coalescence of the Ga2O3 thin films, while low growth pressure could suppress the appearance of β-Ga2O 3 and promote the lateral growth and coalescing of ε-Ga3 thin film.
Journal ArticleDOI
Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD
TL;DR: The phase and microstructural evolution of gallium oxide (Ga2O3) films grown on vicinal (0001) sapphire substrates was investigated using a suite of analytical tools in this article .
Journal ArticleDOI
Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
Yeong Je Jeong,Ji-Hyoen Park,Min Jae Yeom,In Nam Kang,Jeong Yong Yang,Hyeong-Yun Kim,Dae-Woo Jeon,Geonwook Yoo +7 more
TL;DR: In this article , high quality α-Ga2O3 layers were grown on a sapphire substrate via halide vapor-phase epitaxy (HVPE), and a stack of Ti/Al/Ni/Au was used for the S/D electrode, exhibiting significantly reduced contact resistance.
References
More filters
Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
Recent progress in Ga2O3 power devices
Masataka Higashiwaki,Kohei Sasaki,Hisashi Murakami,Yoshinao Kumagai,Akinori Koukitu,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi +7 more
TL;DR: In this article, a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices is presented, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy.
Journal ArticleDOI
Oxygen vacancies and donor impurities in β-Ga2O3
TL;DR: In this paper, the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3 was investigated using hybrid functionals.
Journal ArticleDOI
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.