Journal ArticleDOI
Graphene applications in electronic and optoelectronic devices and circuits
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TLDR
The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field effect transistor (FET) devices in digital applications as mentioned in this paper, however, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics.Abstract:
Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap—mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor (FET) devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.read more
Citations
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Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
Claire Berger,Zhimin Song,Tianbo Li,Xuebin Li,Asmerom Ogbazghi,R. Feng,Zhenting Dai,Alexei Marchenkov,Edward H. Conrad,Phillip N. First,Walt A. de Heer +10 more
TL;DR: In this article, an ultrathin epitaxial graphite graphite (NPEG) was grown by thermal decomposition on the (0001) surface of 6H-SiC and characterized by surface-science techniques.
Journal ArticleDOI
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Antonio Di Bartolomeo,Alessandro Grillo,Francesca Urban,Laura Iemmo,Filippo Giubileo,Giuseppe Luongo,Giampiero Amato,Luca Croin,Linfeng Sun,Shi-Jun Liang,Shi-Jun Liang,Lay Kee Ang +11 more
TL;DR: In this article, the authors discuss the high-bias electrical characteristics of back-gated field effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts.
Journal ArticleDOI
Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
Antonio Di Bartolomeo,Giuseppe Luongo,Filippo Giubileo,Nicola Funicello,Gang Niu,Thomas Schroeder,Marco Lisker,Grzegorz Lupina +7 more
TL;DR: In this paper, a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor was proposed for high-performance photodetection.
Journal ArticleDOI
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
Antonio Di Bartolomeo,Giuseppe Luongo,Filippo Giubileo,Nicola Funicello,Gang Niu,Thomas Schroeder,Marco Lisker,Grzegorz Lupina +7 more
TL;DR: In this article, a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor was proposed for high-performance photodetection.
Journal ArticleDOI
Structural, magnetic and electronic state characterization of L1 0 -type ordered FeNi alloy extracted from a natural meteorite
Masato Kotsugi,Hiroshi Maruyama,Naoki Ishimatsu,N. Kawamura,Motohiro Suzuki,Masaichiro Mizumaki,Keiichi Osaka,T. Matsumoto,Takuo Ohkochi,Takumi Ohtsuki,Takayuki Kojima,Masaki Mizuguchi,Koki Takanashi,Yusuke Watanabe +13 more
TL;DR: MCD analysis using the K absorption edge suggests that the magnetic anisotropy could originate from the orbital magnetic moment of 3d electrons in Fe; this result is consistent with that in a previous report obtained with synthetic L10-FeNi.
References
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Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
Journal ArticleDOI
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Journal ArticleDOI
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
Journal ArticleDOI
Large-scale pattern growth of graphene films for stretchable transparent electrodes
Keun Soo Kim,Yue Zhao,Houk Jang,Sang Yoon Lee,Jong Min Kim,Kwang S. Kim,Jong Hyun Ahn,Philip Kim,Philip Kim,Jae-Young Choi,Byung Hee Hong +10 more
TL;DR: The direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers is reported, and two different methods of patterning the films and transferring them to arbitrary substrates are presented, implying that the quality of graphene grown by chemical vapours is as high as mechanically cleaved graphene.