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Journal ArticleDOI

Graphene FET Gigabit ON–OFF Keying Demodulator at 96 GHz

TLDR
In this article, the authors demonstrate the demodulation of a multi-Gb/s ON-OFF keying (OOK) signal on a 96 GHz carrier by utilizing a 250-nm graphene field effect transistor as a zero bias power detector.
Abstract
We demonstrate the demodulation of a multi-Gb/s ON–OFF keying (OOK) signal on a 96 GHz carrier by utilizing a 250-nm graphene field-effect transistor as a zero bias power detector. From the eye diagram, we can conclude that the devices can demodulate the OOK signals up to 4 Gb/s.

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Citations
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Journal ArticleDOI

A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

TL;DR: In this article, a 200 GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field effect transistor (G-FET) is demonstrated experimentally, which has a gate length of 0.5 μm and a gate width of 2x40 μm.
Journal ArticleDOI

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

TL;DR: In this article, the first graphene-based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band is presented, which exhibits a flat response over radio frequency (RF) range of 90-100 GHz.
Journal ArticleDOI

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

TL;DR: Monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz) are presented and are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal.
Journal ArticleDOI

Graphene integrated circuits: new prospects towards receiver realisation

TL;DR: This work demonstrates a design approach which enables the fabrication of fully integrated radio frequency (RF) and millimetre-wave frequency direct-conversion graphene receivers by adapting the frontend architecture to exploit the state-of-the-art performance of the recently reported wafer-scale CVD metal-insulator-graphene (MIG) diodes.
Journal ArticleDOI

Study of hybrid and pure plasmonic terahertz antennas based on graphene guided-wave structures

TL;DR: Results show that hybrid structures deliver high gain with moderate miniaturization and tunability, rendering them suitable for applications requiring a delicate balance between the three aspects, suggesting their use for application domains with high flexibility requirements or stringent physical constraints.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI

Ultrahigh electron mobility in suspended graphene

TL;DR: In this paper, a single layer graphene was suspended ∼150nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching.
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Graphene field-effect transistors as room-temperature terahertz detectors

TL;DR: In this paper, an efficient room-temperature graphene detector for terahertz radiation was presented, which promises to be considerably faster than competing techniques, and is shown to have high carrier mobility.
Journal ArticleDOI

Wafer-Scale Graphene Integrated Circuit

TL;DR: A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer.
Journal ArticleDOI

Faster than fiber: The future of multi-G/s wireless

J. Wells
TL;DR: The 2009 International Microwave Symposium (IMS 2009) as mentioned in this paper focused on enabling multi-gigabit per second (Gb/s) wireless communication links and discussed the technologies being developed within the industry to enable this new field of communications.
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