Journal ArticleDOI
Growth of highly resistive BiMnO3 films
TLDR
In this article, a resistivity of 5×107Ωcm and an effective (i.e. thickness dependent) dielectric constant of 1400 were obtained for BiMnO3 (010) films.Abstract:
BiMnO3 (010) films (100nm) were grown epitaxially on SrTiO3 (001) and 0.2at.% Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. The microstructure, electrical, and magnetic properties, and indeed the formation of the correct phase, were found to be very sensitive to growth parameters. This optimization has resulted in highly resistive BiMnO3 films and thus enabled room-temperature dielectric measurements: We obtained a resistivity of 5×107Ωcm, and an effective (i.e. thickness dependent) dielectric constant of 1400. These findings pave the way for magnetoelectric measurements and further optimization.read more
Citations
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Journal ArticleDOI
Multiferroic and magnetoelectric materials
TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
Journal ArticleDOI
Multiferroics: progress and prospects in thin films.
TL;DR: Novel device paradigms based on magnetoelectric coupling are discussed, the key scientific challenges in the field are outlined, and high-quality thin-film multiferroics are reviewed.
Journal ArticleDOI
Domain wall nanoelectronics
Gustau Catalan,Jan Seidel,Jan Seidel,Jan Seidel,Ramamoorthy Ramesh,Ramamoorthy Ramesh,James F. Scott +6 more
TL;DR: In this paper, a review of magnetoelectric domain walls is presented, focusing on magneto-electrics and multiferroics but making comparisons where possible with magnetic domains and domain walls.
Journal ArticleDOI
Tunnel junctions with multiferroic barriers
M. Gajek,M. Gajek,Manuel Bibes,Stéphane Fusil,Karim Bouzehouane,Josep Fontcuberta,Agnès Barthélémy,Albert Fert +7 more
TL;DR: This work shows that films of La (0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm, and represents an advance over the original four-state memory concept based on multiferroics.
Journal ArticleDOI
Magnetocapacitance without magnetoelectric coupling
TL;DR: The existence of a magnetodielectric (magnetocapacitance) effect is often used as a test for multiferroic behavior in new material systems.
References
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Journal ArticleDOI
Magnetic control of ferroelectric polarization
Tsuyoshi Kimura,Tsuyoshi Kimura,Takeshi Goto,Hiroshi Shintani,Kyoko Ishizaka,Taka-hisa Arima,Yoshinori Tokura +6 more
TL;DR: The discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering and gigantic magnetoelectric and magnetocapacitance effects are found.
Journal ArticleDOI
Why Are There so Few Magnetic Ferroelectrics
TL;DR: In this paper, the fundamental physics behind the scarcity of ferromagnetic ferroelectric coexistence was explored and the properties of known magnetically ordered ferro-electric materials were examined.
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Observation of coupled magnetic and electric domains
TL;DR: Spatial maps of coupled antiferromagnetic and ferroelectric domains in YMnO3 are obtained by imaging with optical second harmonic generation and lead to a configuration that is dominated by the ferroelectromagnetic product of the order parameters.
Journal ArticleDOI
Magnetocapacitance effect in multiferroic BiMnO 3
TL;DR: In this article, the structural, magnetic, and electric properties of ferromagnetic perovskite structures were investigated and the changes in the dielectric constant were induced by the magnetic ordering.
Journal ArticleDOI
Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures".
TL;DR: It is argued that epitaxial strain does not enhance the magnetization and polarization in BiFeO3 and suggests the potential for novel devices that exploit the anticipated strain-mediated magnetoelectric coupling between the two ordered ground states.