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Journal ArticleDOI

Growth of highly resistive BiMnO3 films

W. Eerenstein, +3 more
- 31 Aug 2005 - 
- Vol. 87, Iss: 10, pp 101906
TLDR
In this article, a resistivity of 5×107Ωcm and an effective (i.e. thickness dependent) dielectric constant of 1400 were obtained for BiMnO3 (010) films.
Abstract
BiMnO3 (010) films (100nm) were grown epitaxially on SrTiO3 (001) and 0.2at.% Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. The microstructure, electrical, and magnetic properties, and indeed the formation of the correct phase, were found to be very sensitive to growth parameters. This optimization has resulted in highly resistive BiMnO3 films and thus enabled room-temperature dielectric measurements: We obtained a resistivity of 5×107Ωcm, and an effective (i.e. thickness dependent) dielectric constant of 1400. These findings pave the way for magnetoelectric measurements and further optimization.

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Citations
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Journal ArticleDOI

Multiferroic and magnetoelectric materials

TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
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Multiferroics: progress and prospects in thin films.

TL;DR: Novel device paradigms based on magnetoelectric coupling are discussed, the key scientific challenges in the field are outlined, and high-quality thin-film multiferroics are reviewed.
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Domain wall nanoelectronics

TL;DR: In this paper, a review of magnetoelectric domain walls is presented, focusing on magneto-electrics and multiferroics but making comparisons where possible with magnetic domains and domain walls.
Journal ArticleDOI

Tunnel junctions with multiferroic barriers

TL;DR: This work shows that films of La (0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm, and represents an advance over the original four-state memory concept based on multiferroics.
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Magnetocapacitance without magnetoelectric coupling

TL;DR: The existence of a magnetodielectric (magnetocapacitance) effect is often used as a test for multiferroic behavior in new material systems.
References
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Journal ArticleDOI

Magnetic control of ferroelectric polarization

TL;DR: The discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering and gigantic magnetoelectric and magnetocapacitance effects are found.
Journal ArticleDOI

Why Are There so Few Magnetic Ferroelectrics

TL;DR: In this paper, the fundamental physics behind the scarcity of ferromagnetic ferroelectric coexistence was explored and the properties of known magnetically ordered ferro-electric materials were examined.
Journal ArticleDOI

Observation of coupled magnetic and electric domains

TL;DR: Spatial maps of coupled antiferromagnetic and ferroelectric domains in YMnO3 are obtained by imaging with optical second harmonic generation and lead to a configuration that is dominated by the ferroelectromagnetic product of the order parameters.
Journal ArticleDOI

Magnetocapacitance effect in multiferroic BiMnO 3

TL;DR: In this article, the structural, magnetic, and electric properties of ferromagnetic perovskite structures were investigated and the changes in the dielectric constant were induced by the magnetic ordering.
Journal ArticleDOI

Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures".

TL;DR: It is argued that epitaxial strain does not enhance the magnetization and polarization in BiFeO3 and suggests the potential for novel devices that exploit the anticipated strain-mediated magnetoelectric coupling between the two ordered ground states.
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