Journal ArticleDOI
High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity
TLDR
In this paper, a new type of photoconductor with high responsivity and gain over a wide spectral range of DUV to NIR using a wide band gap amorphous gallium oxide (a-Ga2O3) thin film was reported.Abstract:
In this work, a new type of photoconductor with high responsivity and gain over a wide spectral range of DUV to NIR using a wide band gap amorphous gallium oxide (a-Ga2O3) thin film was reported for the first time. The responsivity (gain) at deep UV-250, UV-350, VIS-525 and NIR-850 nm is as high as 1099 (5438), 265 (936), 205 (483) and 122 A W−1 (178), respectively. More interestingly, we demonstrate that a novel “thermal relaxation” (TR) process (short-time heating) can effectively reduce the dark current and improve the response recovery time from hours to seconds without reducing the gain of the a-Ga2O3 detector. The mechanism related to oxygen vacancies and thermal energy and tail state excitation is proposed to explain our experimental phenomena. This result suggests that amorphous Ga2O3 films have potential applications in high-performance broadband photodetecting devices.read more
Citations
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Journal ArticleDOI
A Strategic Review on Gallium Oxide Based Deep-Ultraviolet Photodetectors: Recent Progress and Future Prospects
Damanpreet Kaur,Mukesh Kumar +1 more
Journal ArticleDOI
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
Xiaohu Hou,Yanni Zou,Mengfan Ding,Yuan Qin,Zhongfang Zhang,Xiaolan Ma,Pengju Tan,Shunjie Yu,Xuanzhe Zhou,Xiaolong Zhao,Guangwei Xu,Haiding Sun,Shibing Long +12 more
Posted Content
Instability of Amorphous Oxide Semiconductors via Carrier-Mediated Structural Transition between Disorder and Peroxide State
TL;DR: In this paper, the excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O 2 −2 −2 -peroxide defects.
Journal ArticleDOI
High-Performance Harsh-Environment-Resistant GaOX Solar-Blind Photodetectors via Defect and Doping Engineering.
Xiaohu Hou,Xiaolong Zhao,Ying Zhang,Zhongfang Zhang,Yan Liu,Yuan Qin,Pengju Tan,Chen Chen,Shunjie Yu,Mengfan Ding,Guangwei Xu,Qin Hu,Shibing Long +12 more
TL;DR: In this article, defect and doping (DD) engineering towards amorphous GaOX (a-GaOX ) has been proposed to obtain ultrasensitive photodetectors for harsh condition application.
Journal ArticleDOI
Performance improvement of amorphous Ga2O3 ultraviolet photodetector by annealing under oxygen atmosphere
Changqi Zhou,Kewei Liu,Xing Chen,Jiaheng Feng,Jialin Yang,Zhenzhong Zhang,Lei Liu,Yang Xia,Dezhen Shen +8 more
TL;DR: In this article, the effect of annealing under oxygen atmosphere on the performance of a-Ga2O3 photodetectors was investigated, and the authors demonstrated the fast-speed and high-rejection-ratio solar-blind ultraviolet (UV) photoderysector based on amorphous Ga2O-3 (a-Ga 2O3) films grown by atomic layer deposition.
References
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Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Frank H. L. Koppens,Thomas Mueller,Phaedon Avouris,Andrea C. Ferrari,Miriam S. Vitiello,Marco Polini +5 more
TL;DR: An overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of differentTwo-dimensional crystals or of two- dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides are provided.
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Oxygen vacancies in ZnO
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Journal ArticleDOI
Hybrid graphene-quantum dot phototransistors with ultrahigh gain
Gerasimos Konstantatos,Michela Badioli,Louis Gaudreau,Johann Osmond,Maria Bernechea,F. Pelayo García de Arquer,Fabio Gatti,Frank H. L. Koppens +7 more
TL;DR: A gain of ∼10(8) electrons per photon and a responsivity of ∼ 10(7) A W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots is demonstrated.
Journal ArticleDOI
High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm.
Xiong Gong,Minghong Tong,Yangjun Xia,Wanzhu Cai,Ji Sun Moon,Yong Cao,Gang Yu,Chan-Long Shieh,Boo Nilsson,Alan J. Heeger +9 more
TL;DR: This work demonstrates polymer photodetectors with broad spectral response fabricated by using a small-band-gap semiconducting polymer blended with a fullerene derivative that can exceed the response of an inorganic semiconductor detector at liquid helium temperature.
Posted Content
Hybrid graphene-quantum dot phototransistors with ultrahigh gain
Gerasimos Konstantatos,Michela Badioli,Louis Gaudreau,Johann Osmond,Maria Bernechea,F. Pelayo García de Arquer,Fabio Gatti,Frank H. L. Koppens +7 more
TL;DR: In this article, the authors exploit the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity.