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Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

TLDR
In this paper, the authors make use of an interface-driven spin-orbit coupling mechanism in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency.
Abstract
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.

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Citations
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Journal ArticleDOI

Advances in magnetoelectric multiferroics.

TL;DR: Progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and usage in applications are reviewed.
Journal ArticleDOI

Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces

TL;DR: This work discusses SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures and puts into context the technological promise of these material classes for developing spin-based device applications at room temperature.
Journal ArticleDOI

Review on spintronics: Principles and device applications

TL;DR: In this paper, the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments, is described with respect to the spin generation methods as detailed in Sections 2-~-9.
Journal ArticleDOI

Scalable energy-efficient magnetoelectric spin-orbit logic.

TL;DR: A scalable spintronic logic device operating via spin–orbit transduction and magnetoelectric switching and using advanced quantum materials shows non-volatility and improved performance and energy efficiency compared with CMOS devices.
References
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Journal ArticleDOI

Electronic analog of the electro‐optic modulator

TL;DR: In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
Journal ArticleDOI

Spin-torque switching with the giant spin hall effect of tantalum

TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
Journal ArticleDOI

Spin Hall effects

TL;DR: In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents as discussed by the authors and the associated spin Hall and inverse spin Hall effects distinguish between charge and spin current where electron charge is a conserved quantity but its spin direction is not.
Journal ArticleDOI

Emergent phenomena at oxide interfaces

TL;DR: Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces, with characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale.
Journal ArticleDOI

Enhanced gilbert damping in thin ferromagnetic films.

TL;DR: The precession of the magnetization of a ferromagnet is shown to transfer spins into adjacent normal metal layers, slowing down the precession corresponding to an enhanced Gilbert damping constant in the Landau-Lifshitz equation.
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