Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
Edouard Lesne,Yu Fu,Simón Oyarzún,Juan-Carlos Rojas-Sánchez,Diogo C. Vaz,Hiroshi Naganuma,Giuseppe Sicoli,Jean-Philippe Attane,M. Jamet,Eric Jacquet,J.-M. George,A. Barthélémy,H. Jaffrès,A.R. Fert,Manuel Bibes,Laurent Vila +15 more
TLDR
In this paper, the authors make use of an interface-driven spin-orbit coupling mechanism in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency.Abstract:
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.read more
Citations
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Journal ArticleDOI
Advances in magnetoelectric multiferroics.
TL;DR: Progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and usage in applications are reviewed.
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Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Aurelien Manchon,J. Železný,Ioan Mihai Miron,Tomas Jungwirth,Jairo Sinova,André Thiaville,Kevin Garello,Pietro Gambardella +7 more
TL;DR: In this paper, the authors acknowledge support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin.
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Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces
TL;DR: This work discusses SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures and puts into context the technological promise of these material classes for developing spin-based device applications at room temperature.
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Review on spintronics: Principles and device applications
Atsufumi Hirohata,Keisuke Yamada,Yoshinobu Nakatani,Lucian Prejbeanu,Bernard Dieny,Philipp Pirro,Burkard Hillebrands +6 more
TL;DR: In this paper, the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments, is described with respect to the spin generation methods as detailed in Sections 2-~-9.
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Scalable energy-efficient magnetoelectric spin-orbit logic.
Sasikanth Manipatruni,Dmitri E. Nikonov,Lin Chia-Ching,Gosavi Tanay,Huichu Liu,Bhagwati Prasad,Yen Lin Huang,Yen Lin Huang,Everton Bonturim,Ramamoorthy Ramesh,Ramamoorthy Ramesh,Ian A. Young +11 more
TL;DR: A scalable spintronic logic device operating via spin–orbit transduction and magnetoelectric switching and using advanced quantum materials shows non-volatility and improved performance and energy efficiency compared with CMOS devices.
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