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Identification and design principles of low hole effective mass p-type transparent conducting oxides

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TLDR
In this paper, the authors conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state-of-the-art p-type transparent conducting oxides), as well as wide band gaps.
Abstract
The development of high-performance transparent conducting oxides is critical to many technologies from transparent electronics to solar cells. Whereas n-type transparent con- ducting oxides are present in many devices, their p-type counterparts are not largely com- mercialized, as they exhibit much lower carrier mobilities due to the large hole effective masses of most oxides. Here we conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state-of-the-art p-type transparent conducting oxides), as well as wide band gaps. In addition to the discovery of specific compounds, the chemical rationalization of our findings opens new directions, beyond current Cu-based chemistries, for the design and development of future p-type transparent conducting oxides.

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Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics

TL;DR: Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4.2 V by using a high permittivity ZrO2 dielectric layer replacing traditional SiO2.
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Electronic and transport properties of Li-doped NiO epitaxial thin films

TL;DR: In this article, the effect of Li doping on the electronic, optical and transport properties of NiO epitaxial thin films grown by pulsed laser deposition was investigated, and it was shown that Li doping significantly increases the p-type conductivity of the NiO, but all the films have relatively low room-temperature mobilities.
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Statistical Analysis of Coordination Environments in Oxides

TL;DR: In this paper, a large-scale statistical analysis of the coordination environments of cations in oxides using a large set of experimentally observed compounds (about 8,000) is presented.
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High-Mobility Bismuth-based Transparent p-Type Oxide from High-Throughput Material Screening

TL;DR: In this paper, a bismuth-based double-perovskite oxide with high hole mobility and wide band gap was proposed to solve the problem of finding transparent p-type oxides with a Hall hole mobility above 30 cm$^2$/Vs.
References
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