Impedance Characterization of DNA-functionalization Layers on AlGaN/GaN High Electron Mobility Transistors☆
Nayeli Espinosa,Nayeli Espinosa,Stefan U. Schwarz,Stefan U. Schwarz,Volker Cimalla,A. Podolska,Oliver Ambacher,Oliver Ambacher +7 more
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TLDR
In this paper, the bio-functionalization layer was modeled as a membrane with a charge transfer resistor in series with a Warburg element, which presents impedance to diffusion of electrolyte ions.About:
This article is published in Procedia Engineering.The article was published on 2015-01-01 and is currently open access. It has received 4 citations till now. The article focuses on the topics: Dielectric spectroscopy & Electrical impedance.read more
Citations
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Journal ArticleDOI
An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor
Jun Liu,Heqiu Zhang,Dongyang Xue,Aqrab ul Ahmad,Xiaochuan Xia,Yang Liu,Huishi Huang,Wenping Guo,Hongwei Liang +8 more
TL;DR: In this paper, a highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated, where the self-assembled monolayers of 3-aminopropyltriethioxysilane (APTES) with terminal amino groups formed on the hydroxylation surface were used as substrates for glucose oxidase (GOx) immobilization.
Journal ArticleDOI
High sensitivity detection of glucose with negatively charged gold nanoparticles functionalized the gate of AlGaN/GaN High Electron Mobility Transistor
Jun Liu,Heqiu Zhang,Xia Xiao-chuan,ul Ahmad Aqrab,Dongyang Xue,Huishi Huang,Nanfa Xu,Xi Qingnan,Wenping Guo,Hongwei Liang +9 more
TL;DR: In this article, a high sensitivity glucose sensor using AlGaN/GaN based high electron mobility transistor (HEMT) was fabricated and the 3-aminopropyltriethioxysilane (APTES) was aligned to the GaN surface by forming the covalent linkage between them.
Book ChapterDOI
Label-Free Biosensors Based on III-Nitride Semiconductors
TL;DR: In this chapter, fabrication and properties of group III-nitride electronic biosensors are discussed with a main focus on AlGaN/GaN field-effect transistors.
Journal ArticleDOI
The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors
TL;DR: In this paper, a GaAs/AlGaAs HEMT biosensors of different epitaxial structures and device structures were fabricated to study the electric properties consistency and the relationship between channel size and consistency.
References
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Journal ArticleDOI
Possibilities and limitations of label-free detection of DNA hybridization with field-effect-based devices
Arshak Poghossian,Andrey G. Cherstvy,Sven Ingebrandt,Andreas Offenhäusser,Michael J. Schöning +4 more
TL;DR: In this paper, a new DNA-detection method is introduced, which utilizes an ion-sensitive field-effect device as transducer, based upon the DNA hybridization induced redistribution of the ion concentration within the intermolecular spaces and/or the alteration of the Ion sensitivity of the device is proposed as detection mechanism.
Journal ArticleDOI
Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design
TL;DR: This paper presents a comprehensive review of the ion-sensitive field-effect transistor (ISFET) and its applications in biomolecular sensing and characterization of electrochemical interfaces and particular attention is given to the use of the Ion-sensitive transistors as replacements for microarrays in DNA gene expression analysis.
Journal ArticleDOI
Recent advances in wide bandgap semiconductor biological and gas sensors
Stephen J. Pearton,Fan Ren,Yu-Lin Wang,Byung Hwan Chu,K. H. Chen,Chih-Yang Chang,Wantae Lim,Jenshan Lin,David P. Norton +8 more
TL;DR: There has been significant recent interest in the use of surface-functionalized thin film and nanowire wide bandgap semiconductors, principally GaN, InN, ZnO and SiC, for sensing of gases, heavy metals, UV photons and biological molecules as mentioned in this paper.
Journal ArticleDOI
Label-free detection of single nucleotide polymorphisms utilizing the differential transfer function of field-effect transistors.
Sven Ingebrandt,Yu Han,F. Nakamura,F. Nakamura,Arshak Poghossian,Michael J. Schöning,Andreas Offenhäusser +6 more
TL;DR: A differential ac readout concept for FET microarrays, which enables a stable operation of the sensor against many of these side-parameters, reliable readout and a possibility for a quick screening of large sensor arrays.
Journal ArticleDOI
DNA‐sensor based on AlGaN/GaN high electron mobility transistor
Stefan U. Schwarz,Stefan U. Schwarz,Stefanie Linkohr,Pierre Lorenz,Stefan Krischok,Takako Nakamura,Volker Cimalla,Christoph E. Nebel,Oliver Ambacher,Oliver Ambacher +9 more
TL;DR: In this article, a novel HEMT-based DNA hybridization sensor is presented, which uses a system of linker molecules to covalently bond the probe DNA to the semiconductor surface.
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