Journal ArticleDOI
Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
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TLDR
A metal-semiconductor field effect transistor (MESFET) utilizing surface layers of GaAs grown at a low temperature by MBE (LT GaAs) under the gate electrode has been fabricated in this article.Abstract:
A metal-semiconductor field-effect transistor (MESFET) utilizing surface layers of GaAs grown at a low temperature by MBE (LT GaAs) under the gate electrode has been fabricated. The high trap density of LT GaAs reduces the surface fields of the FET, suppresses gate leakage, and increases the gate-drain breakdown voltage without sacrificing current drive capability. An undoped AlAs layer is incorporated between the LT GaAs layer and the channel as a barrier to the diffusion of excess As from the LT GaAs layer to the channel. A 74- mu m-gate-width device demonstrated an improved breakdown voltage of 34.85 V with a g/sub m/ of 144 mS/mm and an I/sub dss/ of 248 mA/mm. >read more
Citations
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Journal ArticleDOI
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
TL;DR: In this article, a high-voltage high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers, and the device breakdown voltage was found to increase with the addition of the field plates.
Journal ArticleDOI
Molecular beam epitaxial GaAs grown at low temperatures
David C. Look,David C. Look +1 more
TL;DR: In this paper, the point defects and precipitates of MBE GaAs are investigated in low-temperature (LT) GaAs, and the most outstanding features of LT MBEGaAs are very high point-defect densities, e.g. about 1020 AsGa centers cm−3 in 200 °C material, and high concentrations (about 1017 cm −3) of large (about 30 A diameter) As precipitates after annealing such material for 10 min at 600 °C.
Journal ArticleDOI
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
Shoou-Jinn Chang,Ming-Lun Lee,Jinn-Kong Sheu,W.C. Lai,Yan-Kuin Su,Ching-Heng Chang,C.J. Kao,Gou-Chung Chi,J.M. Tsai +8 more
TL;DR: In this article, a low-temperature (LT) gallium nitride (GaN) cap layer and indium-tin-oxide (ITO) metal contacts were successfully fabricated.
Journal ArticleDOI
Gate breakdown in MESFETs and HEMTs
Robert J. Trew,Umesh K. Mishra +1 more
Abstract: A new model for gate breakdown in MESFETs and HEMTs is presented. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts the gate current versus bias behavior observed in experimental data. The model is consistent with various reports of breakdown and light emission phenomena reported in the literature. >
Journal ArticleDOI
High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
TL;DR: In this paper, the gate reverse breakdown and forward turn-on voltages are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel, which is shown that a reverse bias of 42 V or forward bias of 9,3 V is needed to reach a gate current of 1 mA/mm of gate width.
References
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Journal ArticleDOI
New MBE buffer used to eliminate backgating in GaAs MESFETs
TL;DR: In this paper, a buffer is grown by molecular beam epitaxy (MBE) at low substrate temperatures (150-300 degrees C) using Ga and As/sub 4/beam fluxes.
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Power-limiting breakdown effects in GaAs MESFET's
TL;DR: In this paper, a model of the depletion layer configuration of planar and recessed-gate FETs was proposed to solve the problem of reverse breakdown at the drain-side edge of the gate, where the breakdown voltage was inversely proportional to the product of the doping level and active layer thickness.
Journal ArticleDOI
Control of gate—Drain avalanche in GaAs MESFET's
TL;DR: In this paper, a simple lateral spreading model is proposed which predicts that V l is the gate-drain avalanche voltage and Q u is measured in units of 1012electrons/cm2.
Journal ArticleDOI
The role of the device surface in the high voltage behaviour of the GaAs MESFET
T.M. Barton,P.H. Ladbrooke +1 more
TL;DR: In this article, a two dimensional computer simulation of the GaAs MESFET in the presence of a uniform surface charge predicted initial gate-drain avalanche voltages at variance with experiment in two respects: (a) the dependence of initial avalanche voltage upon gate length was weak compared with that evident in practice.
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Drain avalanche breakdown in gallium arsenide MESFET's
Y. Wada,M. Tomizawa +1 more
TL;DR: Avalanche breakdown in GaAs MESFET's simulated by two-dimensional numerical calculation with a two-carrier model is discussed in this paper. But the simulation involves electron-hole pair generation due to impact ionization and employs a simplified model of the surface depletion layer of GaAs.