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Journal ArticleDOI

Improved Thermoelectric Power Factor in Metal-Based Superlattices

Daryoosh Vashaee, +1 more
- 11 Mar 2004 - 
- Vol. 92, Iss: 10, pp 106103-106103
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TLDR
It is shown that metal-based superlattices with tall barriers can achieve a large effective thermoelectric figure of merit (ZT > 5 at room temperature), a key parameter to achieving high performance is the nonconservation of lateral momentum during the thermionic emission process.
Abstract
In this paper we present a detailed theory of electron and thermoelectric transport perpendicular to heterostructure superlattices. This nonlinear transport regime above barriers is also called heterostructure thermionic emission. We show that metal-based superlattices with tall barriers can achieve a large effective thermoelectric figure of merit (ZT > 5 at room temperature). A key parameter to achieving high performance is the nonconservation of lateral momentum during the thermionic emission process. Conservation of lateral momentum is a consequence of translational symmetry in the plane of the superlattice. We also discuss the use of nonplanar barriers and embedded quantum dot structures to achieve high thermoelectric conversion efficiency.

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Citations
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Optimizing thermoelectric power factor by means of a potential barrier

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Nonlinear asymptotic homogenization and the effective behavior of layered thermoelectric composites

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Detrimental influence of nanostructuring on the thermoelectric properties of magnesium silicide

TL;DR: In this article, the effect of bulk nanostructuring in magnesium silicide (Mg2Si) through simulation of thermoelectric properties using a multi-band semi-classical approach is presented.
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Computational study of energy filtering effects in one-dimensional composite nano-structures

TL;DR: In this article, the role of the grain size d, potential barrier height ΦB, grain doping, and the lattice thermal conductivity κL using a one-dimensional model structure was examined.
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Development of semiconducting ScN

TL;DR: In this article, the progress that has taken place over the last several years to overcome the material engineering challenges for high-quality epitaxial ScN thin film growth, analysis of its physical properties including in thermoelectricity and solid-state lighting, $n$-to-p$ carrier-type transition, and integration of ScN with other rocksalt metallic nitrides.
References
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Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI

Quantum dot superlattice thermoelectric materials and devices.

TL;DR: It is demonstrated that improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3thermoelectric materials using a n-type film in a one-leg thermoelectrics device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.8 K.
Journal ArticleDOI

Heterostructure integrated thermionic coolers

TL;DR: In this paper, a single-stage room temperature cooling of high power electronic and optoelectronic devices is achieved by selective emission of hot electrons over a barrier layer from the cathode to the anode.
Journal ArticleDOI

Multilayer Thermionic Refrigeration

TL;DR: In this paper, a new method of refrigeration is proposed by thermionic emission of electrons over Schottky barriers between metals and semiconductors, which can have only a small temperature difference.
Journal ArticleDOI

Electronic and thermoelectric transport in semiconductor and metallic superlattices

TL;DR: In this article, a detailed theory of nonisothermal electron transport perpendicular to multilayer superlattice structures is presented, and the currentvoltage and cooling power density are calculated using Fermi-Dirac statistics, density-of-states for a finite quantum well and the quantum mechanical reflection coefficient.
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