Journal ArticleDOI
Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
Khashayar Ghaffarzadeh,Arokia Nathan,John Robertson,Sang-Wook Kim,Sanghun Jeon,Chang-Jung Kim,U-In Chung,Je-Hun Lee +7 more
TLDR
In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively as mentioned in this paper.Abstract:
Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC) In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively In all cases, there was no significant change in field-effect mobility Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days We observe that the PPC becomes more pronounced at shorter wavelengthsread more
Citations
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Journal ArticleDOI
Flexible Electronics: The Next Ubiquitous Platform
Arokia Nathan,Arman Ahnood,Matthew T. Cole,Sungsik Lee,Yuji Suzuki,Pritesh Hiralal,Francesco Bonaccorso,Tawfique Hasan,Luis Garcia-Gancedo,A. Dyadyusha,Samiul Haque,Piers Andrew,Stephan Hofmann,James Moultrie,Daping Chu,Andrew J. Flewitt,Andrea C. Ferrari,Michael Kelly,John Robertson,Gehan A. J. Amaratunga,William I. Milne +20 more
TL;DR: The current status of flexible electronics is reviewed and the future promise of these pervading technologies in healthcare, environmental monitoring, displays and human-machine interactivity, energy conversion, management and storage, and communication and wireless networks is predicted.
Journal ArticleDOI
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
Journal ArticleDOI
Brain-Inspired Photonic Neuromorphic Devices using Photodynamic Amorphous Oxide Semiconductors and their Persistent Photoconductivity
TL;DR: The demonstration of photonic neuromorphic devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short‐term memory/long-term memory, spike‐timing‐dependent plasticity, and neural facilitation, is reported.
Journal ArticleDOI
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
Sungsik Lee,Khashayar Ghaffarzadeh,Arokia Nathan,John Robertson,Sanghun Jeon,Chang-Jung Kim,I-hun Song,U-In Chung +7 more
TL;DR: In this paper, the electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction.
Journal ArticleDOI
Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
Chen Wei-Tsung,Shih-Yi Lo,Shih-Chin Kao,Hsiao-Wen Zan,Chuang-Chuang Tsai,Jian-Hong Lin,Chun-Hsiang Fang,Chung-Chun Lee +7 more
TL;DR: In this article, the authors discuss the reason for the instability of amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci,Arthur Zhang,Bin Xiang,Shadi A. Dayeh,David P. R. Aplin,Jeongwon Park,Xinyu Bao,Yu-Hwa Lo,Deli Wang +8 more
TL;DR: Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products higher than approximately 10 GHz, which promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
Journal ArticleDOI
Oxygen vacancies in ZnO
TL;DR: Vlasenko and Watkins as mentioned in this paper showed that the oxygen vacancy VO is not a shallow donor, but has a deep e(2+∕0) level at ∼10eV below the conduction band.
Journal ArticleDOI
ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.
Journal ArticleDOI
Band offsets of high K gate oxides on III-V semiconductors
John Robertson,B. Falabretti +1 more
TL;DR: In this article, the band offsets of various gate dielectrics including HfO2, Al2O3, Gd2O 3, Si3N4, and SiO2 on III-V semiconductors such as GaAs, InAs, GaSb, and GaN have been calculated using the method of charge neutrality levels.