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Interface-induced room-temperature multiferroicity in BaTiO 3

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TLDR
Ab initio calculations of realistic interface structures provide insight into the origin of the induced moments and bring support to this new approach for creating room-temperature multiferroics.
Abstract
With only a few known useful room-temperature multiferroics, other ways of achieving materials showing magnetism as well as electrical polarization are sought. The discovery that the ferroelectric BaTiO3 also shows magnetism at room temperature at the interface with iron or cobalt marks a new approach to achieving multiferroic properties.

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The evolution of multiferroics

TL;DR: In this article, a review of multiferroic thin-film heterostructures, device architectures, and domain and interface effects is presented. But the focus of the field is now shifting into neighbouring research areas, as discussed in this review.
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Control of magnetism by electric fields

TL;DR: This Review summarizes the experimental progress made in the electrical manipulation of magnetization in such materials, discusses the current understanding of the mechanisms, and finally presents the future prospects of the field.
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Ferroelectric tunnel junctions for information storage and processing

TL;DR: Ferroelectric tunnel junctions represent a promising and flexible device design that is able to retain its information even when switched off, and to miniaturize such devices to the size of a few nanometres.
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Magnetoelectric and multiferroic media

TL;DR: In this article, the main types and mechanisms of magnetoelectric interactions and conditions of their origin are discussed, as well as potentially practical materials that display magneto-lectric properties at room temperature.
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Electric field control of magnetism in multiferroic heterostructures

TL;DR: In this article, the authors review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components.
References
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Journal ArticleDOI

Multiferroic and magnetoelectric materials

TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
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Multiferroics: a magnetic twist for ferroelectricity

TL;DR: It is found that even a weak magnetoelectric interaction can lead to spectacular cross-coupling effects when it induces electric polarization in a magnetically ordered state.
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Physics and Applications of Bismuth Ferrite

TL;DR: In this paper, the authors summarize both the basic physics and unresolved aspects of BiFeO3 and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.
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Tunneling between ferromagnetic films

TL;DR: In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.
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Why Are There so Few Magnetic Ferroelectrics

TL;DR: In this paper, the fundamental physics behind the scarcity of ferromagnetic ferroelectric coexistence was explored and the properties of known magnetically ordered ferro-electric materials were examined.
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