Ferroelectric tunnel junctions for information storage and processing
TLDR
Ferroelectric tunnel junctions represent a promising and flexible device design that is able to retain its information even when switched off, and to miniaturize such devices to the size of a few nanometres.Abstract:
Computer memory based on ferroelectric polarization is a promising alternative to technologies based, for example, on magnetism. Here, Garcia and Bibes review how ferroelectric tunnel junctions, where ferroelectric polarization controls electrical resistance, could improve the performance of these devices.read more
Citations
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Journal ArticleDOI
Resistive switching materials for information processing
Zhongrui Wang,Huaqiang Wu,Geoffrey W. Burr,Cheol Seong Hwang,Kang L. Wang,Qiangfei Xia,Jianhua Yang +6 more
TL;DR: This Review surveys the four physical mechanisms that lead to resistive switching materials enable novel, in-memory information processing, which may resolve the von Neumann bottleneck and examines the device requirements for systems based on RSMs.
Journal ArticleDOI
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.
Fucai Liu,Lu You,Kyle L. Seyler,Xiaobao Li,Peng Yu,Junhao Lin,Xuewen Wang,Jiadong Zhou,Hong Wang,Haiyong He,Sokrates T. Pantelides,Sokrates T. Pantelides,Wu Zhou,Pradeep Sharma,Xiaodong Xu,Pulickel M. Ajayan,Junling Wang,Zheng Liu,Zheng Liu +18 more
TL;DR: Room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K is reported and switchable polarization is observed in thin CIPS of ∼4 nm.
Journal ArticleDOI
Learning through ferroelectric domain dynamics in solid-state synapses.
Sören Boyn,Sören Boyn,Julie Grollier,Gwendal Lecerf,Bin Xu,Nicolas Locatelli,Stéphane Fusil,Stéphanie Girod,Stéphanie Girod,C. Carrétéro,Karin Garcia,Stéphane Xavier,Jean Tomas,Laurent Bellaiche,Manuel Bibes,Agnès Barthélémy,Sylvain Saïghi,Vincent Garcia +17 more
TL;DR: This work reports on synapses based on ferroelectric tunnel junctions and shows that STDP can be harnessed from inhomogeneous polarization switching and demonstrates that conductance variations can be modelled by the nucleation-dominated reversal of domains.
Journal ArticleDOI
A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
TL;DR: In this paper, the authors provide a comprehensive review of recent progress in voltage control of magnetism in different thin films and discuss the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field.
References
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