Journal ArticleDOI
Intermodulation Linearity Characteristics of 14-nm RF FinFETs
TLDR
In this paper, the authors investigate the RF intermodulation characteristics of transistors from a 14-nm RF FinFET technology using experimental measurements, circuit simulation with Berkeley short-channel IGFET model-common multi-gate (BSIM-CMG), and Volterra series.Abstract:
This paper investigates the RF intermodulation characteristics of transistors from a 14-nm RF FinFET technology using experimental measurements, circuit simulation with Berkeley short-channel IGFET model-common multi-gate (BSIM-CMG), and Volterra series. Linearity sweet spots with respect to gate voltage and RF power, as well as its drain voltage dependence, are examined. Key BSIM-CMG model parameters required for simultaneous fitting of dc I–V , S-parameters, and intermodulation distortion are identified and demonstrated. Volterra series analysis shows that distortion resulting from ${V}_{\textsf {DS}}$ derivatives of ${I}_{\textsf {DS}}$ dominates at most biases. A minimum third-order intercept gate voltage ${V}_{\textsf {GS,IP3}}$ of 0.5 V is observed, compared with 0.7 V in a 28-nm high- ${k}$ metal-gate planar device.read more
Citations
More filters
Book ChapterDOI
The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES
TL;DR: In this paper, an expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Journal ArticleDOI
Gate Oxide Variability Analysis of a Novel 3 nm Truncated Fin–FinFET for High Circuitry Performance
TL;DR: In this paper, the analog and circuitry amplifying capacity of TF-FinFET with two different oxide thicknesses at this small scale of gate length was examined, and the results of simulation also showed the compatibility of this device in terms of high performance analog application.
Journal ArticleDOI
Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit
TL;DR: In this article , the performance analysis of multigate devices is done using a fully calibrated 3-D technology computer-aided design (TCAD) simulation based on selfconsistent solutions of Poisson's equation, drift-diffusion transport equation, and carrier continuity equation with quantum correction terms for accounting band-to-band tunneling and confinement effects.
Journal ArticleDOI
Robustness evaluation of electrical characteristics of sub-22 nm FinFETs affected by physical variability
TL;DR: B robustness evaluation of sub-22 nm FinFETs electrical characteristics affected by the physical variability process is proposed and results highlight that the IOFF currents are more affectedby the impact of geometrical parameters on the FinFet devices than the ION currents.
References
More filters
Journal Article
The design of CMOS radio-frequency integrated circuits, 2nd edition
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Book
Distortion analysis of analog integrated circuits
Piet Wambacq,Willy Sansen +1 more
TL;DR: General techniques to suppress nonlinear behavior such as pre-distortion, linear and nonlinear feedback are explained in detail and illustrated with realistic examples to fill the gap between the theory of nonlinear systems and practical analog integrated circuits.
Book
Nonlinear Microwave and RF Circuits
TL;DR: This book discusses Solid-State Device Modeling, Volterra-Series and Power-Series Analysis, and Harmonic-Balance analysis of Balanced Circuits and Active Mixers.
Journal ArticleDOI
A three-step method for the de-embedding of high-frequency S-parameter measurements
TL;DR: In this paper, the authors proposed a general method of deembedding S-parameter measurements of the device under test (DUT) for which typical parasitics associated with probe pads and interconnect-metal lines can be deembedded from the measurement.
Journal ArticleDOI
Silicon:germanium heterojunction bipolar transistors: from experiment to technology
Bernard S. Meyerson,David L. Harame,J.M.C. Stork,Emmanuel F. Crabbe,James H. Comfort,Gary L. Patton +5 more
TL;DR: In this article, the first integrated circuits in the silicon:germanium materials system were presented, with the first IC components being SiGe HBT based 1 Ghz, 12 bit, digital to analog converters.
Related Papers (5)
Investigation of Tunable Characteristics of Independently Driven Double Gate FinFETs in Analog/RF Domain Using TCAD Simulations
K. K. Nagarajan,R. Srinivasan +1 more