Leakage mechanism in GaN and AlGaN Schottky interfaces
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In this paper, the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed based on detailed temperature-dependent current-voltage (I-V-T) measurements.Abstract:
Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.read more
Citations
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Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects
S. N. Grinyaev,A. N. Razzhuvalov +1 more
TL;DR: In this paper, the influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied.
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Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices
TL;DR: In this paper, the current transport mechanism of Schottky contacts to AlInGaN superlattice samples with different background carrier concentrations is studied by currentvoltage (I-V) characteristics and theory analysis based on the thermionic emission (TE) and thermionic field emission (TFE) models.
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Insight into the Al/N-GaN barrier property to realize high quality n-type Ohmic contact
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Numerical analysis of gate leakage current in AlGaN Schottky diodes
TL;DR: In this article, the influence of the tunneling current on the leakage current in AlGaN Schottky diodes was studied theoretically and it was shown that the most important conductance mechanism in these structures is tunneling, whereas thermionic emission has lower influence on the total current practically throughout the whole reverse bias range and doping concentrations studied.
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References
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Field and thermionic-field emission in Schottky barriers
F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
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Atomic geometry and electronic structure of native defects in GaN
TL;DR: In this article, the electronic structure, atomic geometry, and formation energies of native defects in GaN using first-principles total energy calculations were studied, and it was shown that the vacancies are the dominant defects in the GaN, whereas antisites and interstitials are less favorable.
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Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
TL;DR: In this article, temperature-dependent current-voltage measurements have been used to determine the reverse-bias leakage current mechanisms in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy.
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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the authors investigated the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), and detailed electrical properties of the ungated and Schottky-gated portion of the device were investigated separately.
Journal ArticleDOI
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
TL;DR: In this paper, the gate leakage currents in AlGaN/GaN heterostructure field effect transistor (HFET) structures with conventional and polarization-enhanced barriers have been studied.