Leakage mechanism in GaN and AlGaN Schottky interfaces
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In this paper, the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed based on detailed temperature-dependent current-voltage (I-V-T) measurements.Abstract:
Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.read more
Citations
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References
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Metal contacts to n-type GaN
TL;DR: In this article, the barrier heights for these metal contacts were measured using currentvoltage-temperature and capacitance-voltage techniques, and the surface state density of GaN was approximated to be very similar to CdS and almost a factor of ten less than GaAs.
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The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
TL;DR: In this article, the temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers has been measured and analyzed and it was found that the enhanced tunneling component in the transport current of metal GaN-Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.
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Mechanism of anomalous current transport in n-type GaN Schottky contacts
Hideki Hasegawa,Susumu Oyama +1 more
TL;DR: In this paper, a thin surface barrier (TSB) model was proposed in which the width of the Schottky barrier is reduced due to the presence of unintentional surface donors.
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Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
TL;DR: In this article, the off-state gate current in AlGaN/GaN high electron mobility transistors is shown to arise from two parallel gate to substrate tunneling paths: a direct path, and a path via deep traps.
Journal ArticleDOI
Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors
TL;DR: In this article, the authors report on the current transport mechanisms dominant at the Schottky interface of metal-semiconductor-metal photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness.