Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
Rajesh Kappera,Damien Voiry,Sibel Ebru Yalcin,Wesley Jen,Muharrem Acerce,Sol Torrel,Brittany Branch,Sidong Lei,Weibing Chen,Sina Najmaei,Jun Lou,Pulickel M. Ajayan,Gautam Gupta,Aditya D. Mohite,Manish Chhowalla +14 more
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In this article, it is shown that it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material.Abstract:
Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.read more
Citations
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Recent Development of Two-Dimensional Transition Metal Dichalcogenides and Their Applications
TL;DR: In this paper, the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g., MoS2, WS2, MoSe2, and WSe2).
Journal ArticleDOI
Electrical contacts to two-dimensional semiconductors
TL;DR: A comprehensive treatment of the physics of such interfaces at the contact region is presented and recent progress towards realizing optimal contacts for two-dimensional materials is discussed.
Journal ArticleDOI
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Xu Cui,Gwan Hyoung Lee,Young Duck Kim,Ghidewon Arefe,Pinshane Y. Huang,Chul Ho Lee,Daniel Chenet,Xiangwei Zhang,Lei Wang,Fan Ye,Filippo Pizzocchero,Bjarke Sørensen Jessen,Kenji Watanabe,Takashi Taniguchi,David A. Muller,Tony Low,Philip Kim,James Hone +17 more
TL;DR: Modelling of potential scattering sources and quantum lifetime analysis indicate that a combination of short-range and long-range interfacial scattering limits the low-temperature mobility of MoS2.
Journal ArticleDOI
Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures
TL;DR: This review of the challenges in the CVD growth of 2D materials highlights recent advances in the controlled growth of single crystal 2Dmaterials, with an emphasis on semiconducting transition metal dichalcogenides.
References
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Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
TL;DR: This Review describes how the tunable electronic structure of TMDs makes them attractive for a variety of applications, as well as electrically active materials in opto-electronics.
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Photoluminescence from Chemically Exfoliated MoS2
Goki Eda,Goki Eda,Hisato Yamaguchi,Damien Voiry,Takeshi Fujita,Mingwei Chen,Manishkumar Chhowalla +6 more
TL;DR: Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliate monolayers, indicating that their semiconducting properties are largely restored.
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The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
J.A. Wilson,A.D. Yoffe +1 more
TL;DR: The transition metal dichalcogenides are about 60 in number as discussed by the authors, and two-thirds of these assume layer structures and can be cleaved down to less than 1000 A and are then transparent in the region of direct band-to-band transitions.
Journal ArticleDOI
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Yi-Hsien Lee,Xin-Quan Zhang,Wenjing Zhang,Mu-Tung Chang,Cheng-Te Lin,Kai-Di Chang,Ya-Chu Yu,Jacob Tse-Wei Wang,Chia-Seng Chang,Lain-Jong Li,Tsung-Wu Lin +10 more
TL;DR: Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer, and TEM images verify that the synthesized MoS (2) sheets are highly crystalline.