Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors
J. Chermiti,Sawsen Azzouzi,Mounir Ben Ali,Mhamed Trabelsi,Abdelhamid Errachid +4 more
- Vol. 4, Iss: 3, pp 119-127
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TLDR
In this paper, the authors present fundamental limits on the sensitivity of ISFETs micro-sensors arising from intrinsic and extrinsic noise sources using Hooge theory.Abstract:
Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.read more
Citations
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1/f Noise Sources
TL;DR: In this article, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
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Dye-functionalized Sol-gel Matrix on Carbon Nanotubes for Refreshable and Flexible Gas Sensors.
TL;DR: This work fabricated gas sensors by functionalizing dye molecules on the top of carbon nanotube networks via a sol-gel method that could selectively detect various hazardous gases, such as NH3, Cl2 and SO2 gases, via optical and electrical signals.
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Particle simulation of electrolytic ion motions for noise in electrolyte–insulator–semiconductor field-effect transistors
TL;DR: In this article, the authors conduct particle simulation for drain current noise in electrolyte-insulator-semiconductor field effect transistors, to simulate how the thermal motion of charged particles near the interface affects the electrical current noise.
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A Novel Conditioning Circuit for Floating-Gate ISFET Bio-Sensor
TL;DR: In this paper, a novel integrated circuit that improves the thermal stability of the output signal of the ion-sensitive field effect transistors (ISFETs) is described, and the authors investigate the temperature dependency of the FG-isFET using the mentioned macro model and show that the temperature coefficient is about of 6 mV/°C.
References
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Journal ArticleDOI
Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years
TL;DR: In this paper, the development of ISFETs in an historical setting, but not limited to that, is described, based on the development regarding the theory, the technology, the instrumentation and the experience with many specific applications, also future projects are defined, such as concerning cell acidification, this paperET biasing and a complete new range of FET sensors based on local pressure induction by (bio)chemical interaction with immobilised charged molecules (hydrogels).
Journal ArticleDOI
1/f noise sources
TL;DR: In this paper, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors
TL;DR: In this article, an improved analysis of low frequency trapping noise in a MOS device is proposed, taking into account the supplementary fluctuations of the mobility induced by those of the interface charge, which enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations.
1/f Noise Sources
TL;DR: In this article, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Comprehensive study of noise processes in electrode electrolyte interfaces
TL;DR: In this article, a general circuit model is derived for the electrical noise of electrode-electrolyte systems, with emphasis on its implications for electrochemical sensors, and the noise power spectral densities associated with all noise sources introduced in the model are also analytically calculated.