Proceedings ArticleDOI
New ISFET interface circuits with noise reduction capability
M.P. Das,Manabendra Bhuyan +1 more
- pp 1-6
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TLDR
In this paper, three different noise reduction techniques for ISFET readout configuration and their comparison is presented, and it is found that the interface circuits are able to compensate the noise to a great extent by compensation of noise by differential techniques (Implemented in LabVIEW environment and with OPAMP based circuit) and compensation by Wheatstone bridge method.Abstract:
In this paper three different noise reduction techniques for Ion Sensitive Field Effect Transistor (ISFET) readout configuration and their comparison is presented. The proposed circuit configurations are immune to the noise generated from the ISFET sensory system and particularly to the low frequency pH dependent 1/f electrochemical noise. The methods used under these studies are- Compensation of noise by differential techniques (Implemented in LabVIEW environment and with OPAMP based circuit) and compensation by Wheatstone bridge method. Here two identical commercial ISFET sensors from Microsens were used. The statistical and frequency analysis of the data generated by the proposed methods were compared for different pH value ranging from pH-2 to pH 10 under room temperature, and it is found that the interface circuits are able to compensate the noise to a great extent.read more
Citations
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Journal ArticleDOI
ISFETs in CMOS and Emergent Trends in Instrumentation: A Review
TL;DR: In this paper, the authors present a review of the state-of-the-art in terms of device and early readout circuity for ion-sensitive field effect transistors (ISFETs).
Journal ArticleDOI
Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing
Sebastian Pregl,Larysa Baraban,Violetta Sessi,Thomas Mikolajick,Walter M. Weber,Gianaurelio Cuniberti +5 more
TL;DR: In this article, the authors investigated the signal-to-noise behavior of parallel arrays of silicon nanowire transistors with intruded Ni silicide contacts and found that the smallest input referred noise level is obtained when operating the device directly at the threshold voltage.
Journal ArticleDOI
Drift Compensation for pH IsFET Sensor Using NARX Neural Networks
TL;DR: A Nonlinear Autoregressive Neural Network (NARX) to predict the sensor error of IsFET pH drift with accuracy over the long period of time and the Bayesian Regularization backpropagation was used as network training function.
Proceedings ArticleDOI
A ROIC for Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET sensitive to histamine
TL;DR: The development of a ROIC specifically to integrate with a Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET to display the histamine concentration is concerns.
References
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Igor M. Filanovsky,Ahmed Allam +1 more
TL;DR: In this paper, the conditions under which this effect occurs, and stability of this bias point are investigated, and verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.
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Comprehensive study of noise processes in electrode electrolyte interfaces
TL;DR: In this article, a general circuit model is derived for the electrical noise of electrode-electrolyte systems, with emphasis on its implications for electrochemical sensors, and the noise power spectral densities associated with all noise sources introduced in the model are also analytically calculated.
Journal ArticleDOI
Study on the temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide
TL;DR: In this paper, the drift, hysteresis and temperature effect of ISFET devices have been studied, and the I-V curves of a-WO3 gate is obtained at different temperatures and the pH sensitivities were calculated in the acid buffer solutions.