Journal ArticleDOI
Modeling and characterization of gate oxide reliability
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TLDR
In this article, a technique of predicting the lifetime of an oxide to different voltages, different oxide areas, and different temperatures is presented using the defect density model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate and screen time/screen yield can be predicted.Abstract:
A technique of predicting the lifetime of an oxide to different voltages, different oxide areas, and different temperatures is presented. Using the defect density model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. This modeling procedure is applicable to both wafer-level and long-term reliability tests. Process improvements including defect gettering and alternative dielectrics such as chemical-vapor-deposited oxides are evaluated in the format of defect density as a function of effective oxide thinning. >read more
Citations
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Journal ArticleDOI
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
Robin Degraeve,Guido Groeseneken,R. Bellens,J. L. Ogier,M. Depas,Philippe Roussel,Herman Maes +6 more
TL;DR: In this paper, a percolation-based model for intrinsic breakdown in thin oxide layers is proposed, which can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the Q/sub BD/-distribution for ultrathin oxides.
Journal ArticleDOI
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
K.F. Schuegraf,Chenming Hu +1 more
TL;DR: In this paper, a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 /spl Aring/ and 130 /spl Ring/, is presented, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses.
Journal ArticleDOI
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
Hei Wong,Hei Wong,Hiroshi Iwai +2 more
TL;DR: In this article, the authors reviewed several critical issues of MOS gate dielectrics in the nanometer range and suggested that the conventional oxide can be scaled down, in principle, to two atomic layers of about 7 A, but this is not practically feasible because of the non-scalabilities of interface, trap capture cross-section, leakage current, and the statistical parameters of fabrication processes.
Proceedings ArticleDOI
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
TL;DR: In this article, a consistent model for the intrinsic time dependent dielectric breakdown (TDDB) of thin oxides is introduced, which links the existing anode hole injection and the electron trap generation models together and describes wearout as a hole induced generation of electron traps.
Journal ArticleDOI
On the breakdown statistics of very thin SiO2 films
TL;DR: In this article, a new model to describe the breakdown statistics of thin SiO2 films is presented, and the obtained distribution of failures has been found to provide very good fits of the experimental statistical data that correspond to both constant-current and constant-voltage stress experiments.
References
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Journal ArticleDOI
Electrical breakdown in thin gate and tunneling oxides
TL;DR: In this article, a quantitative model for oxide breakdown based on impact ionization and hole trapping at the cathode is presented and shown to agree well with the experimental J - t and time-to-breakdown, (t BD ) results.
Journal ArticleDOI
Dielectric breakdown in electrically stressed thin films of thermal SiO2
TL;DR: In this paper, the intrinsic breakdown mechanism in films of thermal SiO2 in the thickness range 30-300 A was studied and it was determined that high-field and high electron injection current conditions existing in the films just prior to breakdown result in the generation of a very high density of defects which behave electrically as stable electron traps.
Proceedings ArticleDOI
Acceleration Factors for Thin Gate Oxide Stressing
Joe W. McPherson,David A. Baglee +1 more
TL;DR: In this article, the authors used an Eyring model based on thermodynamic free energy considerations to analyze time dependent dielectric breakdown (TDDB) data for 100A of thermally grown SiO2.
Journal ArticleDOI
Substrate hole current and oxide breakdown
TL;DR: In this article, it was shown that hole generation mechanism is linked to oxide time-dependent breakdown and when the hole fluence reaches a certain critical value, breakdown occurs, in agreement with a hole-trapping-induced breakdown model.
Proceedings ArticleDOI
Time-Zero Dielectric Reliability Test by a Ramp Method
TL;DR: In this paper, the authors used a long-established feature of time dependent dielectric breakdown (TDDB) to predict the rate of breakdown failures in the field using a ramped voltage breakdown histogram of a sample population.